Zobrazeno 1 - 10
of 403
pro vyhledávání: '"Shih-Hung Chen"'
Autor:
Chih-Kai Liu, Wei-Yuan Chiang, Pei-Zong Rao, Pei-Hsiu Hung, Shih-Hung Chen, Chiung-An Chen, Liang-Hung Wang, Patricia Angela R. Abu, Shih-Lun Chen
Publikováno v:
Micromachines, Vol 13, Iss 2, p 289 (2022)
This paper presents the development of a wide-beam width, dual-band, omnidirectional antenna for the mm-wave band used in 5G communication systems for indoor coverage. The 5G indoor environment includes features of wide space and short range. Additio
Externí odkaz:
https://doaj.org/article/35af38a75cf54945bc4b093e8aaefc43
Autor:
Yen-Yin Li, Yin-Wen Lee, Tuan-Shu Ho, Rong-Tz Wei, Po-Yen Lai, Kao-Sheng Jao, I-Chou Wu, Shih-Hung Chen, Sheng-Lung Huang
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 4, Pp 1-8 (2017)
A compact and wavelength-calibration-free interferometric scheme was numerically and experimentally investigated using an extreme ultraviolet (EUV) source generated by a laser-produced plasma. A Michelson-type interferometer with a common path, forme
Externí odkaz:
https://doaj.org/article/95914425afc64be8a155d022126692f8
Autor:
Ming-Liang Wei, Hang-Ting Lue, Shu-Yin Ho, Yen-Po Lin, Tzu-Hsuan Hsu, Chih-Chang Hsieh, Yung-Chun Li, Teng-Hao Yeh, Shih-Hung Chen, Yi-Hao Jhu, Hsiang-Pang Li, Han-Wen Hu, Chun-Hsiung Hung, Keh-Chung Wang, Chih-Yuan Lu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22f60ad8ecdf1157c488a000d962a1fb
https://doi.org/10.1109/iedm45625.2022.10019495
https://doi.org/10.1109/iedm45625.2022.10019495
Publikováno v:
Sensors & Materials; 2022, Vol. 34 Issue 11, Part 3, p4085-4094, 10p
Autor:
Wen-Chieh Chen, Shih-Hung Chen, Thomas Chiarella, Geert Hellings, Dimitri Linten, Guido Groeseneken
ispartof: IEEE TRANSACTIONS ON ELECTRON DEVICES vol:69 issue:9 pages:5357-5362 status: published
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::baf47d95bc0066be1470d30ad0a7478f
https://lirias.kuleuven.be/handle/20.500.12942/719378
https://lirias.kuleuven.be/handle/20.500.12942/719378
Publikováno v:
IEEE Transactions on Electron Devices. 67:2752-2759
In order to meet the requirement of ultrahigh-speed, low latency, and wide bandwidth (BW) in the next 5G mobile network and internet of things (IoT) applications, the parasitic capacitance specification of electrostatic discharge (ESD) protection dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84bad885822ca8a0a35098f694cebcbd
https://doi.org/10.1109/ted.2020.2994492
https://doi.org/10.1109/ted.2020.2994492
Autor:
Wei-Min Wu, Ming-Dou Ker, Shih-Hung Chen, Arturo Sibaja-Hernandez, Sachin Yadav, Uthayasankaran Peralagu, Hao Yu, AliReza Alian, Vamsi Putcha, Bertrand Parvais, Nadine Collaert, Guido Groeseneken
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e11720428603077563d725f5cb9f9275
https://doi.org/10.1109/iedm19574.2021.9720581
https://doi.org/10.1109/iedm19574.2021.9720581
Publikováno v:
2021 International Semiconductor Conference (CAS).
The sensitivity of latch-up to wafer thickness is investigated with TCAD simulations. The dependency of bipolar and well resistances on substrate thickness is first evaluated, and later used to assess the loop gain of the latch-up circuit. Transient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b20492f19e8f65fa009abc3d9d11dac
https://doi.org/10.1109/cas52836.2021.9604133
https://doi.org/10.1109/cas52836.2021.9604133
Autor:
Ming-Dou Ker, Guido Groeseneken, Uthayasankaran Peralagu, Nadine Collaert, Shih-Hung Chen, V. Putcha, Bertrand Parvais, Wei-Min Wu, A. Sibaja-Hernandez, Sachin Yadav, Alireza Alian
Publikováno v:
2021 43rd Annual EOS/ESD Symposium (EOS/ESD).
In this paper, Gallium Nitride (GaN) Metal-Insulator-Semiconductor (MIS)-HEMTs are compared with conventional Schottky Metal-Semiconductor HEMTs in terms of DC and ESD performance. Measurement results indicate TLP failures are highly related to 2DEG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::900aa84c6eb74d97358618f4cc34a4a2
https://doi.org/10.23919/eos/esd52038.2021.9574716
https://doi.org/10.23919/eos/esd52038.2021.9574716
Autor:
Phoumra Tan, Marko Simicic, Yoojin Ban, Artemisia Tsiara, Peter De Heyn, Xin Wu, Michael J. Hart, Joris Van Campenhout, Kristof Croes, James Karp, Dimitri Linten, Shih-Hung Chen, Jonathan Chang, Dean Tsaggaris
Publikováno v:
2021 43rd Annual EOS/ESD Symposium (EOS/ESD).
ESD robustness for self-protected advanced Silicon photonic components integrated into optical interposers is reported, including industry-first CDM data. HBM performance in reverse bias polarity is shown to be the limiting factor and is correlated t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::700dafe29d5a7a75f104396cdacd3f84
https://doi.org/10.23919/eos/esd52038.2021.9574767
https://doi.org/10.23919/eos/esd52038.2021.9574767