Photofragments C2H3+HCO from Acrolein Photolyed at 297 nm: Distribution of Rotational States of HCO.

Autor: Shih-Hui Jen, 任世慧

87
Acrolein (C2H3CHO) is a resistant to photooxidation and a day- and night- time lachrymator found in Los Angeles smog. We investigate photodissociation dynamics of acrolein by detecting fragment HCO. The formation threshold of acrolein to C2H3

Externí odkaz: http://ndltd.ncl.edu.tw/handle/57808927076128480520

Review article: recommended reading list of early publications on atomic layer deposition - outcome of the 'virtual Project on the History of ALD'

Autor: Riikka L. Puurunen, Mikhail Chubarov, Tommi Kääriäinen, Cheol Seong Hwang, Çaǧla Özgit-Akgün, Geert Rampelberg, Erwan Rauwel, Rong Chen, Anjana Devi, David Campbell Cameron, Thomas E. Seidel, Jussi Lyytinen, Liliya Elnikova, A. A. Malkov, Markku Leskelä, Georgi Popov, Henrik Pedersen, Tanja Kallio, A. Outi I. Krause, Jaana Kanervo, Jakob Kuhs, Tobias Törndahl, Gloria Gottardi, A. A. Malygin, Nathanaelle Schneider, Fred Roozeboom, Małgorzata Norek, Marja-Leena Kääriäinen, Adam A. Łapicki, Dohan Kim, Irina Kärkkänen, Fabien Piallat, Harri Lipsanen, Esko Ahvenniemi, Oili Ylivaara, Lev Klibanov, Jyrki Molarius, Claudia Wiemer, Shih Hui Jen, J. Ruud van Ommen, Andrew R. Akbashev, Kestutis Grigoras, Dmitry Suyatin, Christian Militzer, Yury Koshtyal, Hele Savin, Jonas Sundqvist, Timo Sajavaara, Luca Lamagna, Véronique Cremers, Stefan Ivanov Boyadjiev, Mikhail Panov, Saima Ali, Oksana Yurkevich, Dennis M. Hausmann, Ivan Khmelnitskiy, Hossein Salami, Viktor Drozd, Mikhael Bechelany, Robin H. A. Ras, Abdelkader Mennad, Maria Berdova

Publikováno v: Journal of Vacuum Science and Technology. Part A: International Journal Devoted to Vacuum, Surfaces, and Films, 35(1)
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2017, 35 (1), ⟨10.1116/1.4971389⟩
Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 35(1):010801, 1-13. AVS Science and Technology Society
Ahvenniemi, E, Akbashev, A, Ali, S, Bechelany, M, Berdova, M, Boyadjiev, S, Cameron, D, Chen, R, Chubarov, M, Cremers, V, Devi, A, Drozd, V, Elnikova, L, Gottardi, G, Grigoras, K, Hausmann, D, Hwang, C S, Jen, S-H, Kallio, T, Kanervo, J, Khmelnitskiy, I, Kim, D H, Klibanov, L, Koshtyal, Y, Krause, O, Kuhs, J, Kärkkänen, I, Kääriäinen, M-L, Kääriäinen, T, Lamagna, L, Lapicki, A, Leskelä, M, Lipsanen, H, Lyytinen, J, Malkov, A, Malygin, A, Mennad, A, Militzer, C, Molarius, J, Norek, M, Özgit-Akgün, Ç, Panov, M, Pedersen, H, Piallat, F, Popov, G, Puurunen, R, Rampelberg, G, Ras, R H A, Rauwel, E, Roozeboom, F, Sajavaara, T, Salami, H, Savin, H, Schneider, N, Seidel, T E, Sundqvist, J, Suyatin, D, Törndahl, T, van Ommen, J R, Wiemer, C, Ylivaara, O & Yurkevich, O 2017, ' Review Article: Recommended reading list of early publications on atomic layer deposition : Outcome of the "Virtual Project on the History of ALD" ', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 35, no. 1, 010801 . https://doi.org/10.1116/1.4971389
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2, 35
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2017, 35 (1), ⟨10.1116/1.4971389⟩

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa895b65e04c902eab774083e92e5f89
https://doi.org/10.1116/1.4971389

EUV Research Activity at SEMATECH

Autor: Alin Antohe, Long He, Jun Sung Chun, Shih-Hui Jen, Frank Goodwin, Patrick A. Kearney, Mark Neisser

Publikováno v: Journal of Photopolymer Science and Technology. 27:595-600

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c143fb4fea822e36b50ff236ff50e592
https://doi.org/10.2494/photopolymer.27.595

Thermo-mechanical properties of alumina films created using the atomic layer deposition technique

Autor: Jacob A. Bertrand, Yung-Cheng Lee, David C. Miller, Arthur S. Morris, Ross R. Foster, Shih-Hui Jen, Shawn J. Cunningham, Martin L. Dunn, Steven M. George

Publikováno v: Sensors and Actuators A: Physical. 164:58-67

Interdigitated humidity sensors with atomic layer deposited (ALD) coatings of aluminum oxide demonstrated no leakage current relative to uncoated sensors stored in the ambient, indicating Al2O3 may be used to limit the effects of H2O and other chemic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::de54ea1011b99a2a2eef1c465b7aa526
https://doi.org/10.1016/j.sna.2010.09.018

Fluorescent tags to visualize defects in Al2O3 thin films grown using atomic layer deposition

Autor: Yadong Zhang, David C. Miller, Shih-Hui Jen, Jacob A. Bertrand, Ronggui Yang, Steven M. George, Yu-Zhong Zhang, Martin L. Dunn, Yung-Cheng Lee

Publikováno v: Thin Solid Films. 517:6794-6797

Defects and cracks in thin film barriers that are coated on polymers allow the leakage of reactive species through the polymer substrate. Fluorescent tags have been developed to visualize defects and cracks in thin film barriers and to inspect rapidl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c7b71707346ea0e92d24da0c36d9bfdd
https://doi.org/10.1016/j.tsf.2009.05.037