Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Shih-Hsuan Tang"'
Autor:
Chun-Sung Sung, Hao-Jung Cheng, Nan-Fu Chen, Shih-Hsuan Tang, Hsiao-Mei Kuo, Ping-Jyun Sung, Wu-Fu Chen, Zhi-Hong Wen
Publikováno v:
Marine Drugs, Vol 21, Iss 2, p 113 (2023)
Aaptamine, a natural marine compound isolated from the sea sponge, has various biological activities, including delta-opioid agonist properties. However, the effects of aaptamine in neuropathic pain remain unclear. In the present study, we used a chr
Externí odkaz:
https://doaj.org/article/edb3ca4e7ed4490d84d09947888ec309
Autor:
Shih-Hsuan Tang, 唐士軒
94
Since vertical handoff technology is a popular research area, numerous seamless vertical handoff works have been proposed recently. Unfortunately, most of them focus on Internet Mobility, and are not concerned how to provide a seamless vertic
Since vertical handoff technology is a popular research area, numerous seamless vertical handoff works have been proposed recently. Unfortunately, most of them focus on Internet Mobility, and are not concerned how to provide a seamless vertic
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/07111323532804073736
Autor:
Shih Hsuan Tang, Binh Tinh Tran, Nguyen Hong Quan, Chi Lang Nguyen, Guang-Li Luo, Edward Yi Chang, Yung Hsuan Su
Publikováno v:
Electronic Materials Letters. 10:759-762
High crystal quality, smooth surface and fully relaxed Ge1− x Si x (0.05 ≤ x ≤ 0.1) buffers are grown on 6°-off (100) Si substrate by UHV-CVD. A low-temperature (LT) Ge seed layer is used to improve the quality of the Ge1− x Si x buffers. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70a53cda2d0656c5b527fe7ef85a7c93
https://doi.org/10.1007/s13391-014-4016-7
https://doi.org/10.1007/s13391-014-4016-7
Publikováno v:
ECS Transactions. 53:59-67
Lately, the semiconductor industry has paid a lot of attentions to the III-V compound semiconductor materials such as InSb, InxGa1-xAs for next generation CMOS applications, because these materials have significantly higher carrier mobility than sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::79fd0061387f6caa02bdaf51ebb7b656
https://doi.org/10.1149/05303.0059ecst
https://doi.org/10.1149/05303.0059ecst
Autor:
Edward Yi Chang, Mantu K. Hudait, Yung Hsuan Su, Chien I. Kuo, Ching Yi Hsu, Hong Quan Nguyen, Shih Hsuan Tang, Guang-Li Luo, Hai Dang Trinh
Publikováno v:
Microelectronic Engineering. 97:16-19
Epitaxial germanium metal-oxide-semiconductor capacitors (MOSCAP) were fabricated on GaAs substrate using atomic layer deposited Al"2O"3 gate dielectric with surface treatments including pure HF and HF plus rapid thermal oxidation (RTO). The electric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1ce25024cb345a9f7a0c9ada0578f35
https://doi.org/10.1016/j.mee.2012.03.014
https://doi.org/10.1016/j.mee.2012.03.014
Autor:
Ching Yi Hsu, Edward Yi Chang, Shih Hsuan Tang, Yung Hsuan Su, Chien I. Kuo, Hai Dang Trinh, Chia Hua Chang
Publikováno v:
ECS Transactions. 44:715-720
In the study, the growth of InAs on Si is demonstrated using "interface blocking" technique with SiGe layers as buffer layer. And the growth of high quality Ge film on GaAs is demonstrated using ultra high vacuum chemical vapor deposition (UHVCVD). B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89056b1f23e905723802b529054a7771
https://doi.org/10.1149/1.3694389
https://doi.org/10.1149/1.3694389
Autor:
Chia-Ta Chang, Chi-Chung Kei, Yueh-Chin Lin, Marko Radosavljevic, Yun-Chi Wu, Yuen Yee Wong, Jui-Chien Huang, Edward Yi Chang, Shih-Hsuan Tang, Mantu K. Hudait
Publikováno v:
Solid-State Electronics. 54:37-41
In x Ga 1− x As III–V compound semiconductor metal–oxide–semiconductor field-effect transistors have become a popular topic recently due to the higher drift velocity, and lower effective mass of the In x Ga 1− x As materials. The impact of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac81e2c78099913e9612c0de56d0a303
https://doi.org/10.1016/j.sse.2009.09.033
https://doi.org/10.1016/j.sse.2009.09.033
Publikováno v:
ECS Transactions. 13:243-252
The growth of the AlGaSb/InAs quantum well field effect transistor(QWFET) epitaxial structure on the Si substrate has been investigated. Buffer layers consisted of UHV/chemical vapor deposited grown Ge/GeSi and molecular beam epitaxy-grown AlGaSb/AlS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f98e03533398d991c47595ef2074bf7
https://doi.org/10.1149/1.2911505
https://doi.org/10.1149/1.2911505
Autor:
Chi Lang Nguyen, Hung Wei Yu, Ching-Wen Kuan, Shih-Hsuan Tang, Yung-Hsuan Su, Edward Yi Chang
Publikováno v:
2014 IEEE International Conference on Semiconductor Electronics (ICSE2014).
The epitaxial growth of high quality Ge thin films on different materials of In 0.51 Ga 0.49 P and GaAs by ultra high vacuum chemical vapor deposition (UHVCVD) system was studied. The crystallinity of high quality Ge layers on In 0.51 Ga 0.49 P and G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7c937b6558177e16b8e61e0823427b4
https://doi.org/10.1109/smelec.2014.6920908
https://doi.org/10.1109/smelec.2014.6920908
Publikováno v:
GLOBECOM
Traditional spectrum allocation approaches assume that the intended users of BSs are treated equally, without consideration of their distances. Consequently, the efficiency of spectrum usage for downlink transmissions may suffer, because a BS may int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6526dc2e542593d8190afde0c4199dd6
https://doi.org/10.1109/glocom.2011.6133816
https://doi.org/10.1109/glocom.2011.6133816