Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Shih-Hian Huang"'
Publikováno v:
2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
This paper performed a detail study on the strained PMOS fabricated on the (110) Si substrate. We showed that in the (110) plane, the four-fold symmetry direction, , has the ideal band-structure features for the uniaxial-process-induced hole mobility
Autor:
J.Y.-C. Sun, Shih-Hian Huang, Carlos H. Diaz, Ching-Wei Tsai, Mong-Song Liang, Hsien-Hsin Lin, Shih-Chang Chen, Howard Wang, Tze-Liang Lee
Publikováno v:
2006 International Electron Devices Meeting.
A study was performed to investigate the effect of multiple stressors on CMOS devices on (110) and (100) substrates with different channel directions. For the first time, 87% ION-IOFF improvement is achieved by utilizing SiGe-S/D and compressive cont
Autor:
Wang, H.C.-H., Shih-Hian Huang, Ching-Wei Tsai, Hsien-Hsin Lin, Tze-Liang Lee, Shih-Chang Chen, Diaz, C.H., Mong-Song Liang, Sun, J.Y.-C.
Publikováno v:
2006 International Electron Devices Meeting; 2006, p1-4, 4p
Publikováno v:
2007 International Symposium on VLSI Technology, Systems & Applications (VLSI-TSA); 2007, p1-2, 2p