Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Shih-Chieh Teng"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 335-346 (2016)
The rapid growth of data center, ubiquitous cloud computing, and mobile gadgets has made flash memory one of the major semiconductor markets. The booming request of flash memory has not only brought substantial economic and societal benefit but led t
Externí odkaz:
https://doaj.org/article/3ae0ddcddcf147649fa2ae246d12b2dd
Autor:
Shih-Chieh Teng, 鄧世傑
98
Learning English in Taiwan has its constraints for the limited exposure of English. To increase optimal exposure and enhance learners’ English proficiency, the Ministry of Education (MOE) has encouraged universities and colleges to provide
Learning English in Taiwan has its constraints for the limited exposure of English. To increase optimal exposure and enhance learners’ English proficiency, the Ministry of Education (MOE) has encouraged universities and colleges to provide
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/29460456402598140861
Publikováno v:
SID Symposium Digest of Technical Papers. 53:1328-1330
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76377d84cf20961a339d6aa3cf3a4950
https://doi.org/10.1002/sdtp.15755
https://doi.org/10.1002/sdtp.15755
Autor:
Yung-Hsien Wu, Pin-Jiun Wu, Hao-Kai Peng, Guan-Ting Lai, Chuan-Pu Chou, Yi-Fan Chen, Yu-Cheng Kao, Shih-Chieh Teng
Publikováno v:
IEEE Transactions on Nanotechnology. 20:761-764
Ultra-violet laser thermal annealing (LTA) is proposed to form contact TiSix for sub-10 nm FinFETs. Compared to conventional rapid thermal annealing (RTA), LTA process leads to reduced total series resistance (RTotal) by 10.1∼16.1% and 13.0∼15.3%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23fdaf44dae457ffd0545eef6ea6819f
https://doi.org/10.1109/tnano.2021.3118217
https://doi.org/10.1109/tnano.2021.3118217
Publikováno v:
IEEE Electron Device Letters. 41:272-275
With ALD-Co on n+ -Ge (ND of $2\times {10}^{{19}}\text {cm}^{\text {-3}}$ ) as the platform, annealing schemes including rapid thermal annealing (RTA) and laser thermal annealing (LTA) were employed to study its impact on the characteristics of CoGe2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3fbcebf725506fa13779473b8ce9670
https://doi.org/10.1109/led.2019.2961382
https://doi.org/10.1109/led.2019.2961382
Publikováno v:
IEEE Electron Device Letters. 41:139-142
Co silicide on $\text{n}^{+}$ -Si substrate ( $\text{N}_{\text {D}}= {8}\times {10}^{{{19}}}$ cm $^{{-{3}}}$ ) formed by atomic layer deposition (ALD) Co deposition and subsequent rapid thermal annealing (RTA) was proposed as the contact silicide for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e97476d2f26c603774cc170db0fa596
https://doi.org/10.1109/led.2019.2952921
https://doi.org/10.1109/led.2019.2952921
Publikováno v:
IEEE Transactions on Nanotechnology. 18:274-278
A new n-tunnel field effect transistor (TFET) structure that replaces traditional semiconductor material at drain with metal silicide was proposed to enhance device performance while simplifying process. From the TCAD simulation results, by employing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3317ab36d3c14a222b9db28c3a76e33
https://doi.org/10.1109/tnano.2019.2902251
https://doi.org/10.1109/tnano.2019.2902251
Publikováno v:
Microelectronic Engineering. 178:137-140
Prior to contact silicide formation, cryogenic Ge pre-amorphization implantation (PAI) was adopted in sub-20nm FinFETs to investigate how device characteristics can be affected. As compared to room-temperature PAI, cryogenic PAI does not enhance driv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9c86df6a68384c2ef9fbb769a384edf
https://doi.org/10.1016/j.mee.2017.05.031
https://doi.org/10.1016/j.mee.2017.05.031
Publikováno v:
IEEE Electron Device Letters. 38:299-302
Prior to contact silicide formation, multiple Ge pre-amorphization implantation (PAI) with reverse retrograde Ge profile was investigated for sub-20-nm FinFETs. Compared with conventional single PAI, N-FinFETs from the new PAI scheme exhibit enhanced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bdd5ee036ebe322a8daad02ba366c1d
https://doi.org/10.1109/led.2017.2647957
https://doi.org/10.1109/led.2017.2647957
Publikováno v:
IEEE Electron Device Letters. 37:1207-1210
Processes for Fermi level (FL) depinning on n-type epitaxial GeSn ( $N_{D}$ of $10^{\mathrm {{19}}}$ cm $^{-3}$ ) were studied to obtain ohmic contact by forming Yb stanogermanide through $\alpha $ -GeSn/Yb/n-GeSn and SiO2/Yb/n-GeSn structure with 50
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c71e6eecd48f412ba630ff2a24fbebf
https://doi.org/10.1109/led.2016.2591620
https://doi.org/10.1109/led.2016.2591620