Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Shih Wen Shen"'
Publikováno v:
IEEE Transactions on Electron Devices. 53:2471-2477
The performance of thin-film transistors with a novel poly-Si nanowire channel prepared by solid-phase crystallization is investigated in this paper. As compared with conventional planar devices having self-aligned source/drain, the new devices show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6a1ccf396cdb677a4210330084b9618
https://doi.org/10.1109/ted.2006.882033
https://doi.org/10.1109/ted.2006.882033
Publikováno v:
Japanese Journal of Applied Physics. 45:5495-5500
Cu(Mg) alloy films have replaced pure Cu as bottom electrodes for (Ba,Sr)TiO3 (BST) capacitors used in high-frequency devices. A combined BST/Cu(Mg) structure reduced the leakage current density to 3.0×10-8 A/cm2 at 1 MV/cm, and increased the breakd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a491055d73335c06a093fa6fe056b511
https://doi.org/10.1143/jjap.45.5495
https://doi.org/10.1143/jjap.45.5495
Autor:
Ming-Jui Yang, Ing-Jye Huang, Shih-Wen Shen, Chao-Hsin Chien, Peer Lehnen, Shih-Lu Hsu, Jiann Shieh, Tiao-Yuan Huang, Ching-Chich Leu
Publikováno v:
Electrochemical and Solid-State Letters. 8:C74-C76
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::809f29be810cc296f9be843c762acda4
https://doi.org/10.1149/1.1891625
https://doi.org/10.1149/1.1891625
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98772760d48bd2690da8ce12136d828a
https://doi.org/10.7567/ssdm.2006.p-8-10
https://doi.org/10.7567/ssdm.2006.p-8-10
Publikováno v:
Digest of Papers Microprocesses and Nanotechnology 2005.
The feasibility of using Cu (Mg) alloy films as bottom electrodes for (Ba,Sr) TiO/sub 3/ (BST) capacitors has been investigated for application of high-frequency devices at interconnect levels. When Cu was used as the bottom electrode of the BST capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::549a84e07a88f6b742dcc7d581e6e50f
https://doi.org/10.1109/imnc.2005.203769
https://doi.org/10.1109/imnc.2005.203769
Publikováno v:
Digest of Papers Microprocesses and Nanotechnology 2005.
We describe the combination of carbon nanotubes (CNTs) and gold nanoparticle (GNPs) that can be used to investigate the enhancement ability of CNTs by using Raman spectroscopy. In this work, the CNTs were immersed in the GNPs solution and then anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23ab20b712ef754194c436b99c110519
https://doi.org/10.1109/imnc.2005.203720
https://doi.org/10.1109/imnc.2005.203720
Autor:
Shih-Wen Shen, 沈士文
91
In this dissertation, we study the quantized conductance phenomena on the experimental side and obtain the physical parameters of the 2DEG in our samples. Finally, quantum transport in a narrow constriction (NC), and in the presence of a fini
In this dissertation, we study the quantized conductance phenomena on the experimental side and obtain the physical parameters of the 2DEG in our samples. Finally, quantum transport in a narrow constriction (NC), and in the presence of a fini
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/18620319365397669255
Autor:
Tiao-Yuan Huang, Peer Lehnen, Ming Jui Yang, Chao-Hsin Chien, Shih Wen Shen, Tsung Chieh Lee, Wen Ting Lan, Wen Tai Lu
Publikováno v:
Japanese Journal of Applied Physics. 44:7869
In this work, we found that employing a post deposition N2O plasma treatment following the deposition of HfO2 film can effectively improve the electrical characteristics of p-type channel metal–oxide–semiconductor field-effect transistors (pMOSFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::474c13cd7b8c225573eaf0e32f1915d9
https://doi.org/10.1143/jjap.44.7869
https://doi.org/10.1143/jjap.44.7869
Autor:
Rui Hao Huang, Shih Lu Hsu, Chao-Hsin Chien, Ching Chich Leu, Tsung Hsi Yang, Ming Jui Yang, Shih Wen Shen
Publikováno v:
Applied Physics Letters. 86:251906
We have investigated the thermal stability of nickel monogermanide (NiGe) films formed by rapid thermal annealing on both single- and polycrystalline Ge substrates. We found that the NiGe phase is the only one present after nickel germanidation in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faa83f025c361d03cc668d8a428a9905
https://doi.org/10.1063/1.1953880
https://doi.org/10.1063/1.1953880
Publikováno v:
IEEE Transactions on Electron Devices; Oct2006, Vol. 53 Issue 10, p2471-2477, 7p, 4 Black and White Photographs, 5 Diagrams, 1 Chart, 11 Graphs