Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Shih Ni Ong"'
Autor:
Tom Herrmann, Alban Zaka, Zhixing Zhao, Binit Syamal, Wafa Arfaoui, Ruchil Jain, Ming-Cheng Chang, Sameer Jain, Shih Ni Ong
Publikováno v:
Solid-State Electronics. 199:108512
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9080e67d663ab8098c988e921925f848
https://doi.org/10.1016/j.sse.2022.108512
https://doi.org/10.1016/j.sse.2022.108512
Publikováno v:
BCICTS
Over the last few decades, SiGe BiCMOS has survived the continued onslaught of RF-CMOS technologies. SiGe HBT invented in late 1980's and later introduced as a BiCMOS technology served as a sweet spot in the emerging RF market, thanks to the SiGe HBT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ace2c7f6818367cfccf7e44ab02925e
https://doi.org/10.1109/bcicts.2018.8551002
https://doi.org/10.1109/bcicts.2018.8551002
Autor:
Shih Ni Ong
At high frequency of gigahertz, the channel thermal noise is dominating the noise of MOSFETs. The channel thermal noise model in short channel MOSFETs deviate from long channel noise model. A simple analytical model for the high frequency channel the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73f54a01092cc68f094b2a1f5c819104
https://hdl.handle.net/10356/63701
https://hdl.handle.net/10356/63701
