Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Shih Hsuan Tang"'
Autor:
Hsiu-Wen Chen, Feng-Cheng Liu, Hsiao-Mei Kuo, Shih-Hsuan Tang, Guang-Hao Niu, Mingzi M. Zhang, Lun Kelvin Tsou, Ping-Jyun Sung, Zhi-Hong Wen
Publikováno v:
Biomedicine & Pharmacotherapy, Vol 172, Iss , Pp 116279- (2024)
Atopic dermatitis (AD) is a chronic inflammatory skin condition primarily driven by T helper 2 (Th2) cytokines, resulting in skin barrier defects, angiogenesis, and inflammatory responses. The marine natural product excavatolide B (EXCB), isolated fr
Externí odkaz:
https://doaj.org/article/34dc58ed404c4130ba2032db110c1bf0
Autor:
Chun-Sung Sung, Hao-Jung Cheng, Nan-Fu Chen, Shih-Hsuan Tang, Hsiao-Mei Kuo, Ping-Jyun Sung, Wu-Fu Chen, Zhi-Hong Wen
Publikováno v:
Marine Drugs, Vol 21, Iss 2, p 113 (2023)
Aaptamine, a natural marine compound isolated from the sea sponge, has various biological activities, including delta-opioid agonist properties. However, the effects of aaptamine in neuropathic pain remain unclear. In the present study, we used a chr
Externí odkaz:
https://doaj.org/article/edb3ca4e7ed4490d84d09947888ec309
Autor:
Shih Hsuan Tang, Binh Tinh Tran, Nguyen Hong Quan, Chi Lang Nguyen, Guang-Li Luo, Edward Yi Chang, Yung Hsuan Su
Publikováno v:
Electronic Materials Letters. 10:759-762
High crystal quality, smooth surface and fully relaxed Ge1− x Si x (0.05 ≤ x ≤ 0.1) buffers are grown on 6°-off (100) Si substrate by UHV-CVD. A low-temperature (LT) Ge seed layer is used to improve the quality of the Ge1− x Si x buffers. In
Publikováno v:
ECS Transactions. 53:59-67
Lately, the semiconductor industry has paid a lot of attentions to the III-V compound semiconductor materials such as InSb, InxGa1-xAs for next generation CMOS applications, because these materials have significantly higher carrier mobility than sili
Autor:
Edward Yi Chang, Mantu K. Hudait, Yung Hsuan Su, Chien I. Kuo, Ching Yi Hsu, Hong Quan Nguyen, Shih Hsuan Tang, Guang-Li Luo, Hai Dang Trinh
Publikováno v:
Microelectronic Engineering. 97:16-19
Epitaxial germanium metal-oxide-semiconductor capacitors (MOSCAP) were fabricated on GaAs substrate using atomic layer deposited Al"2O"3 gate dielectric with surface treatments including pure HF and HF plus rapid thermal oxidation (RTO). The electric
Autor:
Ching Yi Hsu, Edward Yi Chang, Shih Hsuan Tang, Yung Hsuan Su, Chien I. Kuo, Hai Dang Trinh, Chia Hua Chang
Publikováno v:
ECS Transactions. 44:715-720
In the study, the growth of InAs on Si is demonstrated using "interface blocking" technique with SiGe layers as buffer layer. And the growth of high quality Ge film on GaAs is demonstrated using ultra high vacuum chemical vapor deposition (UHVCVD). B
Autor:
Chia-Ta Chang, Chi-Chung Kei, Yueh-Chin Lin, Marko Radosavljevic, Yun-Chi Wu, Yuen Yee Wong, Jui-Chien Huang, Edward Yi Chang, Shih-Hsuan Tang, Mantu K. Hudait
Publikováno v:
Solid-State Electronics. 54:37-41
In x Ga 1− x As III–V compound semiconductor metal–oxide–semiconductor field-effect transistors have become a popular topic recently due to the higher drift velocity, and lower effective mass of the In x Ga 1− x As materials. The impact of
Publikováno v:
ECS Transactions. 13:243-252
The growth of the AlGaSb/InAs quantum well field effect transistor(QWFET) epitaxial structure on the Si substrate has been investigated. Buffer layers consisted of UHV/chemical vapor deposited grown Ge/GeSi and molecular beam epitaxy-grown AlGaSb/AlS
Autor:
Chi Lang Nguyen, Hung Wei Yu, Ching-Wen Kuan, Shih-Hsuan Tang, Yung-Hsuan Su, Edward Yi Chang
Publikováno v:
2014 IEEE International Conference on Semiconductor Electronics (ICSE2014).
The epitaxial growth of high quality Ge thin films on different materials of In 0.51 Ga 0.49 P and GaAs by ultra high vacuum chemical vapor deposition (UHVCVD) system was studied. The crystallinity of high quality Ge layers on In 0.51 Ga 0.49 P and G
Publikováno v:
GLOBECOM
Traditional spectrum allocation approaches assume that the intended users of BSs are treated equally, without consideration of their distances. Consequently, the efficiency of spectrum usage for downlink transmissions may suffer, because a BS may int