Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Shih Chun Ling"'
Autor:
SHIH,CHUN-LING, 施淳齡
106
The management of Environmental Sensitive Area (ESA) is currently facing several issues regard to environment and administration prospective due to the spatially overlapping on authorities, regulations, standard protocols. The issues bring t
The management of Environmental Sensitive Area (ESA) is currently facing several issues regard to environment and administration prospective due to the spatially overlapping on authorities, regulations, standard protocols. The issues bring t
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/7zzk8x
Autor:
Hao-Chung Kuo, Wei-Wen Chan, Shih-Chun Ling, Huei Min Huang, Chiao-Yun Chang, Shing-Chung Wang, Tien-Chang Lu
Publikováno v:
Journal of Lightwave Technology. 29:2761-2765
Non-polar (a-plane) InGaN-GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73 ×
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3733ec007e79e56d017bedd0d0383d7
https://doi.org/10.1109/jlt.2011.2164896
https://doi.org/10.1109/jlt.2011.2164896
Publikováno v:
IEEE Journal of Quantum Electronics. 47:1101-1106
A-plane InGaN/GaN multiple-quantum wells (MQWs) were grown on a series of nanorod epitaxial lateral overgrowth (NRELOG) templates with varied nanorod depth. Optical properties of these samples were investigated by excitation power and temperature-dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bb891d8df472d653c8f572c536155f5
https://doi.org/10.1109/jqe.2011.2158632
https://doi.org/10.1109/jqe.2011.2158632
Autor:
Masahito Yamaguchi, Wei Tsai Liao, Tomoyuki Tanikawa, Ching Hsueh Chiu, Yi-Chen Chen, Shing-Chung Wang, Chien-Chung Lin, Yoshio Honda, Shih Chun Ling, Hao-Chung Kuo, Zhen-Yu Li, Tien-Chang Lu, Da Wei Lin, Nobuhiko Sawaki
Publikováno v:
Journal of Crystal Growth. 318:500-504
We present a study of high quality (1 1 ¯ 0 1) GaN films and the InGaN/GaN multiple quantum wells (MQWs) using epitaxial lateral overgrowth (ELO) technique by atmospheric pressure metal organic chemical vapor deposition (MOCVD). The smooth coalescen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::716c298bd5f41f0c1ee020d8f6480282
https://doi.org/10.1016/j.jcrysgro.2010.10.054
https://doi.org/10.1016/j.jcrysgro.2010.10.054
Autor:
Jenq Dar Tsay, Shun-Jen Cheng, Hao-Chung Kuo, Shih Chun Ling, Chu Li Chao, Po Chun Liu, Jun-Rong Chen, Shing-Chung Wang, Tien-Chang Lu, Tsung-Shine Ko
Publikováno v:
Journal of Crystal Growth. 312:1316-1320
The crystal quality of a -plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a -p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f312b724ac4394827e08bdbd5db93d7
https://doi.org/10.1016/j.jcrysgro.2009.10.047
https://doi.org/10.1016/j.jcrysgro.2009.10.047
Autor:
Jui-Yuan Chen, Huei Min Huang, Tien-Chang Lu, S. C. Wang, Jinchai Li, Hao-Chung Kuo, Shih-Chun Ling, Tsung-Shine Ko
Publikováno v:
Journal of Crystal Growth. 312:869-873
The non-polar a -plane Al x Ga 1− x N alloys on GaN epitaxial layer with different Al compositions (0≤ x ≤0.2) were grown on r -plane (1 1¯ 0 2) sapphire substrates by using low-pressure metalorganic chemical vapor deposition (MOCVD) and the A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e59b77b8c4e3880e99e581fb24c900da
https://doi.org/10.1016/j.jcrysgro.2009.12.064
https://doi.org/10.1016/j.jcrysgro.2009.12.064
Autor:
Tien-Chang Lu, Shih-Chun Ling, Chin-Tsang Hung, Hao-Chung Kuo, Shing-Chung Wang, Jun-Rong Chen, Tsung-Shine Ko
Publikováno v:
Journal of Crystal Growth. 310:4871-4875
High-reflectivity ultraviolet distributed Bragg reflectors (DBRs), based on AlN/AlGaN quarter-wave layers, have been designed and grown on 2 in (0 0 0 1) sapphire substrates by metalorganic chemical vapor deposition. The growth of 20-pair AlN/Al0.23G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12488bc2b8fc1f9025252d2154b1d6eb
https://doi.org/10.1016/j.jcrysgro.2008.08.025
https://doi.org/10.1016/j.jcrysgro.2008.08.025
Autor:
Hao-Chung Kuo, Shih Chun Ling, Shing Chung Wang, Tsung-Shine Ko, Tien-Chang Lu, Te Chung Wang
Publikováno v:
Journal of Crystal Growth. 310:2330-2333
Ultraviolet nonpolar InGaN/GaN light-emitting diodes grown on trench epitaxial lateral overgrowth (TELOG) a -plane GaN template by metalorganic chemical vapor deposition were fabricated. Two emission peaks at 373 and 443 nm are observed from each fab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48620903faaa5cb5534d3fcd96dd29bf
https://doi.org/10.1016/j.jcrysgro.2007.12.013
https://doi.org/10.1016/j.jcrysgro.2007.12.013
Autor:
T. C. Wang, Po-Chun Liu, Jun-Rong Chen, Hao-Chung Kuo, Jenq-Dar Tsay, Tien-Chang Lu, Tsung-Shine Ko, Shing-Chung Wang, Shih-Chun Ling, Bao-Yao Chang
Publikováno v:
IEEE Photonics Technology Letters. 21:1130-1132
In this work, we have successfully grown a-plane green light-emitting diodes (LEDs) on r-plane sapphire and investigated the device characteristics of a-plane green LEDs. The apparent emission polarization anisotropy was observed and the polarization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca042886d2ee8acfaecdc9471559fc53
https://doi.org/10.1109/lpt.2009.2023234
https://doi.org/10.1109/lpt.2009.2023234
Publikováno v:
IEEE Electron Device Letters. 30:496-498
The light-output power of GaN-based light-emitting diodes (LEDs) was enhanced by microhole array pattern and roughened GaOx film grown on the exposed surface. The GaOx film was grown by photoelectrochemical (PEC) oxidation via H2O and formed a natura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29168910cf2995daee82989a67bbbfec
https://doi.org/10.1109/led.2009.2016766
https://doi.org/10.1109/led.2009.2016766