Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Shigeyuki Shimoto"'
Autor:
Yukio Taniguchi, Shigeyuki Shimoto, Takahiko Endo, Takashi Okada, Tomoya Katou, Genshiro Kawachi, Kazufumi Azuma, Shinzo Tsuboi, Takashi Ohno, Masahiro Mitani, Masakiyo Matsumura
Publikováno v:
Japanese Journal of Applied Physics. 47:8707-8713
Thin-film transistors (TFTs) were fabricated on polycrystalline silicon (poly-Si) films formed by position-controlled large-grain growth technology using an excimer laser. The field-effect mobility, on-off transition slope, and threshold voltage were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::009a03241296550a9a7cd0d8f4ce054c
https://doi.org/10.1143/jjap.47.8707
https://doi.org/10.1143/jjap.47.8707
Autor:
Takahiko Endo, Takashi Ohno, Masakiyo Matsumura, Tomoya Katou, Kazufumi Azuma, Shigeyuki Shimoto, Yukio Taniguchi
Publikováno v:
Japanese Journal of Applied Physics. 47:7793-7797
The factors affecting the elongation of Si grains were investigated for the excimer-laser-induced lateral grain growth method. The length of Si grains was found to depend on the laser light intensity profile, the waveform of the laser light pulse, pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecbe92f6c22117236be812d710912413
https://doi.org/10.1143/jjap.47.7793
https://doi.org/10.1143/jjap.47.7793
Autor:
Kazufumi Azuma, Yukio Taniguchi, Takashi Ohno, Tomoya Katou, Masakiyo Matsumura, Takahiko Endo, Shigeyuki Shimoto
Publikováno v:
Japanese Journal of Applied Physics. 47:1862-1866
We have developed a method of preselecting a lucky nucleus among many simultaneously born nuclei for the growth of position-controlled large single Si grains by excimer-laser-induced lateral crystallization. Using this method, arrays of large Si grai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dd484626c9a03c84736ddf06ccf233e
https://doi.org/10.1143/jjap.47.1862
https://doi.org/10.1143/jjap.47.1862
Autor:
Yoshimichi Ohki, Kazuo Imamura, Nahoko Miyazaki, Shigeyuki Shimoto, Makoto Fujimaki, Kwang Soo Seol
Publikováno v:
Journal of Applied Physics. 86:5270-5273
Thermal annealing effects on optical and structural properties of Ge-doped SiO2 thin films prepared by the chemical vapor deposition and flame hydrolysis deposition methods were investigated. The thin film prepared by the former method showed inhomog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31fc1e54e7a9f52dea07e8df7eac4e62
https://doi.org/10.1063/1.371525
https://doi.org/10.1063/1.371525
Publikováno v:
IEEJ Transactions on Fundamentals and Materials. 119:113-117
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::637cf713c673bacaf29cf8ce7ec52f16
https://doi.org/10.1541/ieejfms1990.119.1_113
https://doi.org/10.1541/ieejfms1990.119.1_113
Autor:
Y. Nishihara, Shigeyuki Shimoto, N. Miyazaki, Makoto Fujimaki, Kazuo Imamura, K. Terasawa, Yoshimichi Ohki
Publikováno v:
Proceedings of 1998 International Symposium on Electrical Insulating Materials. 1998 Asian International Conference on Dielectrics and Electrical Insulation. 30th Symposium on Electrical Insulating Materials (IEEE Cat. No.98TH8286).
In this paper, we report the difference in absorption spectrum that has a close relation to photosensitivity and the improvement of the quality by thermal annealing between two Ge-doped SiO/sub 2/ planar waveguides synthesized by different methods.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf55d18baa2269622ea626d7345620d4
https://doi.org/10.1109/iseim.1998.741681
https://doi.org/10.1109/iseim.1998.741681