Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Shigeto R. Nishitani"'
Publikováno v:
MATERIALS TRANSACTIONS. 62:929-934
In the present study, the diffusion coefficient of Cu in Fe was experimentally estimated from the precipitation kinetics down to 390°C. At this temperature, diffusion couples, which is a typical method to obtain diffusion coefficients, cannot be app
Autor:
Shigeto R. Nishitani
Publikováno v:
Philosophical Magazine. 101:622-642
The energies of small-angle tilt grain-boundaries have been predicted using the Read–Shockley model based on dislocation theory. However, experimentally observed energies have been inconsistent wit...
Publikováno v:
Journal of Japan Institute of Light Metals. 69:518-524
Autor:
Shigeto R. Nishitani
Publikováno v:
Materials Science Forum. 941:2296-2299
The critical inconsistency on the small angle boundary energy between the theoretical prediction of Read-Shockley model and the experimental results was discussed. The plots of the ratio between boundary energyEand the tilt angleθagainst logθshow d
Autor:
Kazuyoshi Ogasawara, Pondchanok Chinapang, Hirofumi Yoshikawa, Akinori Saeki, Tetsuro Katayama, Yoshinobu Kamakura, Daisuke Tanaka, Naoto Tamai, Kunihisa Sugimoto, Shigeto R. Nishitani, Shigeyuki Masaoka
Publikováno v:
Journal of the American Chemical Society. 142(1)
Recently, metal-organic frameworks (MOFs) composed of sulfur secondary building units (sulfur-SBUs) have attracted significant attention as unique electronic materials with high conductivities and photo- and electrocatalytic properties. Herein we rep
Autor:
Shigeto R. Nishitani, Yosuke Yamamoto, Motoyuki Kiyohara, Yuichi Sakamoto, Rika Kubo, Chihori Shirayama
Publikováno v:
MATERIALS TRANSACTIONS. 56:933-936
Publikováno v:
関西学院大学高等教育研究. 3:65-73
Publikováno v:
MATERIALS TRANSACTIONS. 54:656-660
The formation mechanism of the LPSO structures of MgZnY alloys has been investigated by the energetic assessments with the first principles calculations. For the key players of the LPSO structures, the stacking faults and the solute elements of Z
Autor:
Shigeto R., Nishitani
Publikováno v:
関西学院大学高等教育研究. 2:103-111
Autor:
Shigeto R. Nishitani, Tadaaki Kaneko
Publikováno v:
Journal of Crystal Growth. 310:1815-1818
Silicon carbide (SiC) is a promising material for next-generation high-power devices, but the high cost of forming wafers is causing a bottleneck in the replacement of Si with SiC. We report a new solution growth process that exhibits potential for t