Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Shigeta Sakai"'
Autor:
Keito Mori-Tamamura, Yuchi Takahashi, Shigeta Sakai, Yuya Morimoto, Junji Hirama, Atsushi A. Yamaguchi, Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya
Publikováno v:
Science and Technology of Advanced Materials: Methods, Vol 4, Iss 1 (2024)
ABSTRACTSeparated evaluation of factors in the external quantum efficiency (EQE) is important in order to improve the characteristics of semiconductors optical devices. Especially, the internal quantum efficiency (IQE) is an important value which ind
Externí odkaz:
https://doaj.org/article/e41a71acd27f466ca3477302dd2b395f
Publikováno v:
2022 28th International Semiconductor Laser Conference (ISLC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f3f1b79f093939db22ba17b8f6ada2b
https://doi.org/10.23919/islc52947.2022.9943392
https://doi.org/10.23919/islc52947.2022.9943392
Autor:
Keito Mori, Yuchi Takahashi, Shigeta Sakai, Yuya Morimoto, Atsushi A. Yamaguchi, Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya
Publikováno v:
2021 27th International Semiconductor Laser Conference (ISLC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42fc3a1970b9983c2fd396cb77136087
https://doi.org/10.1109/islc51662.2021.9615797
https://doi.org/10.1109/islc51662.2021.9615797
Publikováno v:
Japanese Journal of Applied Physics. 61:061003
Deformation potentials of InGaN have been precisely determined in order to make a reliable prediction of optical gain characteristics in semipolar and nonpolar InGaN quantum wells (QWs) laser didoes (LDs). Since the optical polarization properties in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30085db540b5a2421cde738f2a89802f
https://doi.org/10.35848/1347-4065/ac62e4
https://doi.org/10.35848/1347-4065/ac62e4
Autor:
Atsushi A. Yamaguchi, Yuchi Takahashi, Yuya Kanitani, Takashi Nakano, Shigetaka Tomiya, Kohei Kawakami, Naoto Shimizu, Genki Kobayashi, Shigeta Sakai
Publikováno v:
IEICE Transactions on Electronics. :527-531
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35feb7ae5fe129468ff050cf1cecc2b0
https://doi.org/10.1587/transele.e101.c.527
https://doi.org/10.1587/transele.e101.c.527
Autor:
Itsuki Oshima, Yuya Kanitani, Yuma Ikeda, Yoshihiro Kudo, Shigetaka Tomiya, Atsushi A. Yamaguchi, Shigeta Sakai, Susumu Kusanagi
Publikováno v:
Japanese Journal of Applied Physics. 60:122003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::320d1b7c2f33f2192633a340ebb44384
https://doi.org/10.35848/1347-4065/ac2fef
https://doi.org/10.35848/1347-4065/ac2fef
Autor:
Atsushi A. Yamaguchi, Yuya Kanitani, Yuma Ikeda, Takashi Fujita, Shigetaka Tomiya, Shigeta Sakai
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf4635fe093b443c26ce29d82a8b2533
https://doi.org/10.7567/ssdm.2019.f-2-05
https://doi.org/10.7567/ssdm.2019.f-2-05
Autor:
Yuma Ikeda, Shigeta Sakai, Yuya Kanitani, Susumu Kusanagi, Atsushi A. Yamaguchi, Shigetaka Tomiya, Yoshihiro Kudo, Takashi Fujita
Publikováno v:
Japanese Journal of Applied Physics. 59:091003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b3a7e1a666e10518aee5200405619da
https://doi.org/10.35848/1347-4065/abaebc
https://doi.org/10.35848/1347-4065/abaebc
Autor:
Shigetaka Tomiya, Yuma Ikeda, Yuya Kanitani, Takashi Fujita, Shigeta Sakai, Atsushi A. Yamaguchi
Publikováno v:
2018 IEEE International Semiconductor Laser Conference (ISLC).
Potential fluctuation in InGaN quantum wells causes carrier localization and it strongly affects the gain characteristics in blue/green lasers. In this study, the carrier localization has been experimentally investigated in InGaN quantum wells, and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66f2bb500ae72046e2445bd5dc117dee
https://doi.org/10.1109/islc.2018.8516201
https://doi.org/10.1109/islc.2018.8516201
Publikováno v:
2018 IEEE International Semiconductor Laser Conference (ISLC).
Deformation potentials in InGaN alloy material have been precisely determined. Using these values, optical gain characteristics of semipolar and nonpolar InGaN quantum wells have been theoretically calculated, and it is predicted that high-performanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::931736aa9fc72efe8056a5bb530e1458
https://doi.org/10.1109/islc.2018.8516203
https://doi.org/10.1109/islc.2018.8516203