Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Shigeru Tohyama"'
Autor:
Hiroyuki Kasajima, Yusuke Tsunetoshi, Takuji Kagiya, Yutaka Hara, Shinsaku Suzuki, Motonari Ohashi, Daisuke Kudo, Shigeru Tohyama, Daisuke Yamana, Jun Kimura
Publikováno v:
The Japanese Journal of Gastroenterological Surgery. 48:729-738
Autor:
Shigeru Tohyama, Takuji Kagiya, Hiroyuki Kasajima, Motonari Ohashi, Yutaka Hara, Yusuke Tsunetoshi
Publikováno v:
Nihon Rinsho Geka Gakkai Zasshi (Journal of Japan Surgical Association). 76:1215-1220
Autor:
Motoi, Koyama, Takayuki, Morita, Tadashi, Hashizume, Seiji, Ito, Shigeru, Tohyama, Yukio, Inaba, Susumu, Oishi, Hajime, Morohashi, Yoshiyuki, Sakamoto, Akihiko, Murata, Kenichi, Hakamada
Publikováno v:
Gan to kagaku ryoho. Cancerchemotherapy. 40(12)
The aim of this study was to clarify the risk factors associated with recurrence in patients with stage II colorectal cancer.We performed a retrospective analysis of 316 patients with stage II colorectal cancer who underwent gross radical colectomy b
Autor:
Tokuhito Sasaki, Kuniyuki Okuyama, Takashi Yamamoto, Kentaro Shinoda, Masaru Miyoshi, Yutaka Tanaka, Takao Yamazaki, Tsutomu Endoh, Haruo Ishizaki, Tetsuo Tsuchiya, Kouji Katoh, Seiji Kurashina, Tomohiko Nakajima, Shigeru Tohyama, Yuuhi Okuda
Publikováno v:
SPIE Proceedings.
Uncooled infrared detectors with 12μm pixel pitch video graphics array (VGA) have been developed. To improve the signal to noise ratio (SNR) for 12μm pixel pitch, a highly sensitive bolometer material, an advanced pixel structure for thermal isolat
Autor:
Yoshitaka Asano, H. Azuma, T. Endo, H. Utsumi, Nobukazu Teranishi, K. Masubuchi, Shigeru Tohyama, Kazuo Konuma
Publikováno v:
IEEE Transactions on Electron Devices. 43:282-286
An infrared-bi-color image sensor was developed with a barrier height controlled Schottky-barrier photo diode array for precise temperature images. Low and high barrier height diode pixels are arranged vertically next to one another using a selective
Autor:
H. Utsumi, H. Azuma, Kazuo Konuma, Tsutomu Eundo, K. Masubuchi, Shigeru Tohyama, Yoshinori Asano, Nobukazu Teranishi
Publikováno v:
The Journal of the Institute of Television Engineers of Japan. 50:302-307
An infrared-bi-color image sensor was developed with a barrier-height-controlled Schottky-barrier photo diode array for precise temperature images. Low and high barrier-height diode pixels are arranged vertically next to one another using a selective
Autor:
T. Ono, A. Tanabe, T. Seki, T. Muramatsu, H. Azuma, E. Takano, Kazuo Konuma, Nobukazu Teranishi, H. Goto, H. Sahara, S. Yamagata, Shigeru Tohyama, K. Masubuchi, M. Hijikawa, H. Utsumi
Publikováno v:
IEEE Transactions on Electron Devices. 42:1433-1440
A back surface illuminated 130/spl times/130 pixel PtSi Schottky-barrier (SB) IR-CCD image sensor has been developed by using new wiring technology, referred to as CLOSE Wiring, CLOSE Wiring, designed to effectively utilize the space over the SB phot
Publikováno v:
IEEE Transactions on Electron Devices. 41:1535-1540
A silicon n/sup ++/pn homojunction infrared detector, in which a degenerate n/sup ++/ layer is backed by a metal film forming an ohmic contact, has been proposed and studied. The metal film is a photoelectric conversion region along with the n/sup ++
Autor:
Nobukazu Teranishi, K. Masubuchi, Kazuo Konuma, T. Saito, A. Tanabe, T. Muramatsu, Shigeru Tohyama
Publikováno v:
IEEE Transactions on Electron Devices. 39:1633-1637
Describes a 648*487 pixel PtSi Schottky-barrier infrared CCD image sensor. Due to the development of the modified inverted-LOCOS process, which can minimize dead regions, and the two-dopant concentration structure, which achieves both a large charge
Publikováno v:
IEEE Transactions on Electron Devices. 38:1136-1140
A new silicon photovoltaic infrared sensor is proposed. Its basic operational principle is demonstrated. The sensor consists of three regions with a homojunction structure, having a flexibly designed barrier height corresponding to the cutoff wavelen