Repairing of Cr-photo-mask by ultrafast- pulse laser

Autor: Hiroko Okuyama, Motoki Watanabe, Mamoru Okutomi, Masanao Tani, Takeyo Tsukamoto, Takeyoshi Nakayama, Yuki Kondo, Masaru Sugirua, S. Oyama, Y. Kawasaki, Satoshi Ihara, N. Morirnoto, A. Yokotani, M. Tomita, Quan Li, S. Kubodera, H. Takakusaki, Yoshihisa Uchida, Toshio Goto, Tatuya Kyotani, Jianrong Qiu, H. Yanagita, Keiu Tokumura, Masataka Murahara, Katsunori Tsunoda, Jun Yamada, Hirotaka Nakayama, Nobuyuki Takahashi, Akira Obara, Noriaki Nishi, Nobuo Ando, Nobuo Isii, T. Hashidume, S. Yosihara, Zhengxin Liu, K. Sugioka, Takashi Inoue, K. Miura, Shigeru Yamaguchi, Tetsuya Hattori, H. Matsuno, T. Ikagame, Kouji Higashikawa, Xiaoyang Zeng, Takeshi Sasaki, Jun Kamiiisaka, H. Sano, Hideo Furuhashi, Y. Kawakami, Mineo Hiramatu, Tetukazu Tanaka, Hirofumi Yajima, T. Kawashima, A. Masagaki, Takashi Obara, Sadao Fujii, T. Mori, Takuya Takasaki, Y. Mase, Kozo Yasuda, Yoshiyuki Uchida, M. Ishii, Takenari Mori, Y. Shinto, K. Kadota, Kunimitsu Takahashi, Hiromi Kawase, Takahisa Jitsuno, Masayuki Okoshi, J. Kawanaka, Naoto Koshizaki, Hitoki Yoneda, N.B. Dahotre, H. Ashizawa, Kenichi Ueda, Shigeto Kobayashi, Tomoo Fujioka, Akinori Kaji, T. Hirayama, Nobuo Yasunaga, K. Makino, Masafumi Ito, Akihiro Kono, R. Nomura, Hikaru Kouta, Hideyuki Horisawa, Chobei Yamabe, Kazuyuki Akagawa, Shinji Motokoshi, Tadahiro Ishii, Kazuyuki Hirao, Naoshige Hayashi, J. Nakata, N. Takezoe, S. Ito, Hiroyuki Niino, Mitsugu Hanabusa, J. Morimoto, Keiji Fuse, Yukinori Hato, Sachiko Umeda, Satoru Nishio, Koichi Toyoda, Naokatsu Yamamoto, Y. Minami, T. Kubota, Yukio Nakajima, Hiroyasu Sato, Masaru Hori, H. Takai, Nobuhiro Akasaka, Hiroshi Ito, E. Ozawa, Takeshi Okada, Kazuyoshi Tanaka, W. Sasaki, Mikio Muro, K. Midorikawa, Tsuguru Shirakawa, M. Hasegawa, T. Suzuki, Saburoh Satoii, Masahiro Nakatsuka, Masayuki Nakamura, T. Igarashi, Shigenori Kuriki, Keiji Ebata, Tadatake Sato, Shinnosuke Nozaki, Manabu Shiozaki, K. Suzuki, Kazushi Fujita, K. Hirobe, T. Mitsuyu, H. Iizuka, Hironari Mikata, Koichi Tsukamoto, K. Obata, K. Kurosawa, K. Kumagai, Masashi Ishimine, Takashi Fushimi, Shigeru Semura, T. Sato, Akira Yabe, Koichi Sasaki, Kazuyuki Okada, S. Nakjima, Y. Maezono, Akiyoshi Matsuzaki

Publikováno v: The Review of Laser Engineering. 27:73-77,80

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::49b994848da5b54c991ec1a8c436238e
https://doi.org/10.2184/lsj.27.supplement_73

Reactive ion etching of GaAs in CCl4/H2and CCl4/O2

Autor: Kiyoshi Asakawa, Hiroshi Saitoh, Shigeru Semura

Publikováno v: Journal of Applied Physics. 55:3131-3135

The effect of CCl4/H2 on the etched shape and morphology of GaAs crystals compared with that of CCl4/O2 has been studied. Anisotropic etching with a residue‐free and smooth surface is obtained in CCl4/H2. Etching in CCl4/H2 shows an anisotropic sha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::23144735cd0996d7cde0587de98341ec
https://doi.org/10.1063/1.333311

Hydrogen mixing effects on reactive ion etching of GaAs in chlorine containing gases

Autor: Shigeru Semura, Hiroshi Saitoh

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2:474-476

Etching profile, surface morphology, and radiation damage are studied for GaAs reactive ion etching. The etching characteristics are greatly improved by H2 mixing with CCl4, Cl3F, and CCl2F2. Anisotropic profile and residue‐free surfaces are obtain

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bfee8a0f5275672ea180126e7eac6571
https://doi.org/10.1116/1.572597

GaAs P-N Junction Formation by Carbon Ion Implantation

Autor: Shigeru Semura, Yoh Mita, Masafumi Hashimoto, Noriaki Tsukada

Publikováno v: Extended Abstracts of the 1982 International Conference on Solid State Devices.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0390d4b0d7c8de29705b74f24baa04eb
https://doi.org/10.7567/ssdm.1982.b-6-9

GaAs P-N Junction Formation by Carbon Ion Implantation

Autor: Yoh Mita, Sumio Sugata, Masafumi Hashimoto, Noriaki Tsukada, Shigeru Semura

Publikováno v: Japanese Journal of Applied Physics. 22:405

Carbon ion implantation accompanied with boron ion implantation into n-type GaAs crystals has proved to markedly improve the carbon activation ratio from 4% to 20%. P-n junction diodes fabricated by this technique showed good rectifying characteristi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4aab31a0aa995854d67e818e77f5a605
https://doi.org/10.7567/jjaps.22s1.405