Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Shigeru Nishimatsu"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:607-610
Two different types of paramagnetic centers in silicon, Si-P3 (neutral {110} planar tetravacancies) in a well defined crystalline structure and point defects with poorly defined local structure in substantially damaged crystalline environments, forme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b9e2d6a1ddf5d236607f54f063d673a
https://doi.org/10.1016/0168-583x(91)96241-c
https://doi.org/10.1016/0168-583x(91)96241-c
Publikováno v:
Materials Science Forum. :1227-1232
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34853f5b437097895a7464f6f15fdfea
https://doi.org/10.4028/www.scientific.net/msf.38-41.1227
https://doi.org/10.4028/www.scientific.net/msf.38-41.1227
Publikováno v:
Extended Abstracts of the 1990 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::475b6cecd31f71ebd6409c37daf34925
https://doi.org/10.7567/ssdm.1990.c-4-2
https://doi.org/10.7567/ssdm.1990.c-4-2
Publikováno v:
Japanese Journal of Applied Physics. 30:3199
The radiation damage in SiO2 films thermally grown on silicon and bombarded by ion and neutral beams has been studied by electron spin resonance (ESR). It is found that the E' center generation yield is much higher for ion bombardment than for neutra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::022a72edc376b6d614094a168b25c0bf
https://doi.org/10.1143/jjap.30.3199
https://doi.org/10.1143/jjap.30.3199
Publikováno v:
Japanese Journal of Applied Physics. 29:2265
Silicon dioxide films thermally grown on Si are irradiated with vacuum ultravioulet (VUV) photons (16.7 and 16.8 eV) as the films are supplied with bias voltages between -10 and 10 V. The resultant positive charges and E' centers in the films are stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f34283ee543e411626dc2408518e878
https://doi.org/10.1143/jjap.29.2265
https://doi.org/10.1143/jjap.29.2265
Publikováno v:
Journal of Applied Physics. 62:1459-1468
The Si etch rate in an (F2+O2) microwave plasma has been measured as a function of O2 mixing ratio at a fixed total pressure of 5.3×10−2 Pa. The etch rate significantly decreases with the mixing ratio. This etch rate decrease is due primarily to s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70e3770b70c46e1a08b924a140c57585
https://doi.org/10.1063/1.339652
https://doi.org/10.1063/1.339652
Autor:
Yasuo Wada, Shigeru Nishimatsu
Publikováno v:
Denki Kagaku oyobi Kogyo Butsuri Kagaku. 47:118-123
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fe78f4f2061c1b35b6448fb299f1a16
https://doi.org/10.5796/kogyobutsurikagaku.47.118
https://doi.org/10.5796/kogyobutsurikagaku.47.118
Publikováno v:
Journal of Applied Physics. 64:3697-3705
A hot Cl2 molecular (Cl*2) beam was successfully applied to achieve highly anisotropic, highly selective, and almost damage‐free etching of polycrystalline Si. The anisotropy, the ratio of etch rates in vertical and horizontal directions, was large
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99e858b187acdbea7f8fe3985e11e692
https://doi.org/10.1063/1.341413
https://doi.org/10.1063/1.341413
Publikováno v:
Journal of The Electrochemical Society. 129:2764-2769
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e86cac487abf7453a627baa70a0492e
https://doi.org/10.1149/1.2123675
https://doi.org/10.1149/1.2123675
Publikováno v:
Solid-State Electronics. 21:513-518
Heavily arsenic implanted silicon layers are evaluated by measuring the “refreshtime” of dynamic type MOS memories. The dose range used for the fabrication is around 1.5×10 16 cm −2 due to the sheet resistivity and junction depth requirements.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ddd1aa1e39f20f343248225889e3298
https://doi.org/10.1016/0038-1101(78)90020-5
https://doi.org/10.1016/0038-1101(78)90020-5