Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Shigeru Mano"'
Autor:
Shigeru Mano, Hiromoto, Keiichi Furukawa, Masanobu Miyoshi, Takatoshi Tsujimura, Hiroshi Kashiwagi, Hiromitsu Araki, Atsuo Ezaki
Publikováno v:
SID Symposium Digest of Technical Papers. 43:605-609
A highly efficient OLED lighting product using all-phosphorescent technology, for the first time in the world, is presented. Using proprietary blue phosphorescent emitter, 45 lm/W white emission is achieved at 2800K color temperature. The produced pa
Publikováno v:
Journal of Imaging Science and Technology. 43:339-344
Publikováno v:
NIP & Digital Fabrication Conference. 14:269-272
Publikováno v:
Journal of the American Statistical Association. 89:676-679
In this article the Tukey-Kramer procedure for multiple comparisons of pairwise differences of mean vectors in multivariate normal distributions is considered. A multivariate version of the Tukey-Kramer procedure is presented, and a generalized Tukey
Autor:
Ji Ho Hur, Yuichi Iketsu, Sung Man Hong, Yoon Duck Nam, Dong Hae Oh, Jae Min Kim, Shigeru Mano, Jin Jang, Eun Ho Lee, Se Hwan Kim, Moon Hyo Kang
Publikováno v:
SID Symposium Digest of Technical Papers. 39:93
We developed a stable 2.2 inch, full-color AMOLED display using color filter on a-Si:H TFT backplane and a highly efficient phosphorescent white OLED. It is found that the lifetime of the a-Si:H TFT backplane is over 70,000 hrs at the full white brig
Publikováno v:
Journal of Non-Crystalline Solids. :747-750
a-Si:H formed by the method of reactive evaporation of silicon with supplying hydrogen ion has much the same properties as films prepared by silane grow discharge (GD) decomposition. Growth kinetics in this method is described. Hydrogen ion suppresse
Publikováno v:
Japanese Journal of Applied Physics. 24:14
Doped a-Si:H films, and nondoped and doped a-Si:N:H films were prepared by the electron-beam deposition of silicon, hydrogenation being achieved by supplying hydrogen ions to the film surface during deposition. The photo- and dark-conductivities show
Publikováno v:
Japanese Journal of Applied Physics. 23:273
A high rate deposition method of a-Si: H based on reactive evaporation is described. a-Si: H prepared at a deposition rate of 30 Å/sec has much the same photoconductivity as films prepared by the glow discharge (GD) method. It is revealed that silic
Publikováno v:
Japanese Journal of Applied Physics. 24:1100
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