Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Shigeru Maekawa"'
Autor:
Isao Yoshida, Shuichi Yoshikawa, Shigeru Maekawa, Ryokan Yuasa, Masaaki Nemoto, Yorinobu Yoshisato
Publikováno v:
Japanese Journal of Applied Physics. 35:1720
C-axis oriented Tl2Ba2CaCu2Oδ thin films have been prepared on MgO with good reproducibility by annealing them in an alumina capsule sealed with a gold gasket. The crystalline alignment of the thin films depends on the annealing temperature, the Tl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::383976b16a785aadb3502d458491f4ca
https://doi.org/10.1143/jjap.35.1720
https://doi.org/10.1143/jjap.35.1720
Autor:
Takafumi Yao, Shigeru Maekawa
Publikováno v:
Journal of Crystal Growth. 53:423-431
Device quality single crystalline films of Zn chalcogenides such as ZnSe, ZnTe, ZnS, and Zn(SexTe1−x) have been successfully grown by molecular beam epitaxy (MBE). The films have good crystallinity, having smooth and flat surfaces. The growth rate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8040830388060b83b6c4caf43f628d12
https://doi.org/10.1016/0022-0248(81)90093-2
https://doi.org/10.1016/0022-0248(81)90093-2
Publikováno v:
Japanese Journal of Applied Physics. 20:L741-L744
The photoluminescence properties of molecular beam epitaxially (MBE) grown ZnSe films have been studied. It was found that the critical film thickness above which the photoluminescence spectra show similar features is 0.8 µm. The photoluminescence s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06f5f22454a68ebb2ec1c7c1df3f8c32
https://doi.org/10.1143/jjap.20.l741
https://doi.org/10.1143/jjap.20.l741
Publikováno v:
Journal of the Physical Society of Japan. 38:1394-1399
The energy relaxation process in n -type InSb at liquid helium temperatures under the presence of strong longitudinal magnetic fields has been analysed taking into account the existence of an impurity band. The impurity band is found to act as a ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7d1e0c1e059b944180ccb93de488013
https://doi.org/10.1143/jpsj.38.1394
https://doi.org/10.1143/jpsj.38.1394
Publikováno v:
Journal of Crystal Growth. 45:309-312
Single-crystalline films of ZnSe x Te 1− x (0 ≲ x ≲ 1) have been successfully grown by molecular beam epitaxy. Evaluation of the epitaxial films shows the growth of good-crystallinity films with flat surfaces. The dependence of the composition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e99e8ddff12305068a4e608685a345a
https://doi.org/10.1016/0022-0248(78)90454-2
https://doi.org/10.1016/0022-0248(78)90454-2
Publikováno v:
Japanese Journal of Applied Physics. 15:1001-1007
Thin films of ZnTe single crystal were grown successfully on germanium substrates by molecular beam epitaxy. The epitaxy condition and evaluation of the grown films were extensively investigated. The evaluation and the analysis were made with a scann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76b9e81319b2bf50534230237b990921
https://doi.org/10.1143/jjap.15.1001
https://doi.org/10.1143/jjap.15.1001
Publikováno v:
Surface Science. 86:120-125
Molecular beam epitaxy of In-doped ZnSe has been studied with special emphasis placed on the dependence of the crystallinity and the surface morphology on the substrate temperature (Ts), the arrival rate ratio of Se and Zn (JSeJZn), and growth rate (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c243ac2dc2196eee0a72c6f18cda0dc8
https://doi.org/10.1016/0039-6028(79)90386-8
https://doi.org/10.1016/0039-6028(79)90386-8
Publikováno v:
Journal of Applied Physics. 53:4236-4239
Monolithic electroluminescence devices require planar growth of isolated devices on a substrate. Planar growth has been realized by selective‐area molecular beam epitaxy (MBE). Selective‐area growth of ZnSe thin films by MBE has been successfully
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e7e80d85a438c5af6693d008017d047
https://doi.org/10.1063/1.331249
https://doi.org/10.1063/1.331249
Autor:
Shigeru Maekawa
Publikováno v:
SHINKU. 30:45-53
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b73f6ffc3891238b4034b52004680c0a
https://doi.org/10.3131/jvsj.30.45
https://doi.org/10.3131/jvsj.30.45
Publikováno v:
Journal of Applied Physics. 51:1351-1356
High repetition rate operation of glass lasers up to 30 Hz has been successfully achieved for the first time by developing and using new kinds of phosphate glass. The key point of the success is to make the variation of optical path measured at any d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b09775032e1eb0b3df2ebb3c0abecefa
https://doi.org/10.1063/1.327829
https://doi.org/10.1063/1.327829