Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Shigeru Kaku"'
Autor:
Hiromi Miura, Ayaka Nakamura, Aki Kurosaki, Ai Kotani, Masaru Motojima, Keiko Tanaka, Shigeru Kakuta, Sanae Ogiwara, Yuhsuke Ohmi, Hirotaka Komaba, Samantha L.P. Schilit, Cynthia C. Morton, Channabasavaiah B. Gurumurthy, Masato Ohtsuka
Publikováno v:
BMC Genomics, Vol 25, Iss 1, Pp 1-11 (2024)
Abstract Background Transgenic (Tg) mice are widely used in biomedical research, and they are typically generated by injecting transgenic DNA cassettes into pronuclei of one-cell stage zygotes. Such animals often show unreliable expression of the tra
Externí odkaz:
https://doaj.org/article/9cef2d51b1ca43d99f22dfc17cc3a973
Publikováno v:
ACS Nano. 13:12980-12986
Structure dependent differential tunneling conductance, dI/dV, profiles obtained using scanning tunneling microscopy on both (110)-cleaved surfaces and (001)-growth surfaces in InAs/GaSb and InAs/InxGa1-xSb quantum wells (QWs), which are platforms of
Publikováno v:
Applied Surface Science. 571:151347
We investigated the surface structure of strained-α-Sn layers grown on InSb(0 0 1) surfaces, which have been attracting the attention of the researchers in the field of topological materials, by optimizing the surface cleaning procedures of the InSb
Publikováno v:
ACS nano. 13(11)
Structure dependent differential tunneling conductance, d
Autor:
Shigeru Kaku, Junji Yoshino
Publikováno v:
Small. 16:2002296
The temperature-dependent tip-induced-motion of a Ga adatom on a GaAs (110) surface is experimentally demonstrated using scanning tunneling microscopy (STM). The surface adsorption energy profile obtained by first-principle electronic structure calcu
Origin of symmetric STM images for the asymmetric atomic configuration on GaAs(001)–c(4×4)α surfaces
Publikováno v:
Surface Science. 625:84-89
The empty-state scanning tunneling microscopy (STM) images of GaAs-c(4 × 4)α show symmetric features at positive biases, contrary to the naive prediction based on electron counting model. In this paper, we report that STM simulations based on first
Publikováno v:
Journal of the Korean Physical Society. 55:799-802
Publikováno v:
Ferroelectrics. 379:157-167
We discuss the controversies related with an intrinsic screening effect of the ferroelectric surface and report experiments of electron (e −)/hole (h +) layer on the clean surface of insulating pure BaTiO3 single crystals in ultra high vacuum, whic
Publikováno v:
Ferroelectrics. 370:39-45
The thin films are generally under stress from the substrate. Therefore, we relaxed the stress from a substrate and created almost stress free state. We have investigated the conduction characteristic of such BaTiO 3 thin films. We have found the phe
Publikováno v:
Ferroelectrics. 357:70-73
We measured the transport through Au/(Pb,La)(Zr, Ti)O 3 /(La,Sr) 2 CuO 4 . Applying the +10 V pulses and −10 V pulses, the resistance decreases and increases, respectively. The reproducible resistance modulation is hold beyond 10 hours. After annea