Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Shigeo Yasuhara"'
Autor:
Satoru Kaneko, Takashi Tokumasu, Manabu Yasui, Masahito Kurouchi, Daishi Shiojiri, Shigeo Yasuhara, Sumanta Kumar Sahoo, Musa Mutlu Can, Ruei Sung Yu, Kripasindhu Sardar, Masahiro Yoshimura, Masaki Azuma, Akifumi Matsuda, Mamoru Yoshimoto
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-7 (2024)
Abstract Direct growth of oxide film on silicon is usually prevented by extensive diffusion or chemical reaction between silicon (Si) and oxide materials. Thermodynamic stability of binary oxides is comprehensively investigated on Si substrates and s
Externí odkaz:
https://doaj.org/article/d5bb869b82c549d4b6525780f9d63bfa
Autor:
Satoru Kaneko, Takashi Tokumasu, Manabu Yasui, Masahito Kurouchi, Satomi Tanaka, Chihiro Kato, Shigeo Yasuhara, Tamio Endo, Akifumi Matsuda, Mamoru Yoshimoto, Musa Can, Sumanta Kumar Sahoo, Kripasindhu Sardar, Jyh-Ming Ting, Masahiro Yoshimura
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract Growth morphology of carbon clusters deposited on different substrates were investigated by theoretical and experimental approach. For theoretical approach, molecular dynamics was employed to evaluate an adsorptive stability of different siz
Externí odkaz:
https://doaj.org/article/00285f07cff446158560880ddb70b369
Autor:
Satoru Kaneko, Takeshi Ito, Chihiro Kato, Satomi Tanaka, Shigeo Yasuhara, Akifumi Matsuda, Mamoru Yoshimoto
Publikováno v:
ACS Omega, Vol 2, Iss 4, Pp 1523-1528 (2017)
Externí odkaz:
https://doaj.org/article/c59e9a2084aa4f12beee076fc07439ce
Publikováno v:
Crystal Growth & Design.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e029c627d1e762cbd2175503146a066
https://doi.org/10.1021/acs.cgd.3c00240
https://doi.org/10.1021/acs.cgd.3c00240
Autor:
Satoru, Kaneko, Takashi, Tokumasu, Manabu, Yasui, Masahito, Kurouchi, Satomi, Tanaka, Chihiro, Kato, Shigeo, Yasuhara, Tamio, Endo, Akifumi, Matsuda, Mamoru, Yoshimoto, Musa, Can, Sumanta Kumar, Sahoo, Kripasindhu, Sardar, Jyh-Ming, Ting, Masahiro, Yoshimura
Publikováno v:
Scientific Reports. 12(1)
Growth morphology of carbon clusters deposited on different substrates were investigated by theoretical and experimental approach. For theoretical approach, molecular dynamics was employed to evaluate an adsorptive stability of different size of carb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::239ce9d1b5b6a00cdd70c6eb1fa31a8e
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100882340
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100882340
Publikováno v:
ECS Transactions. 98:177-184
SiGe thin films, such as hydrogenated amorphous silicon germanium (a-SiGe:H) and hydrogenated microcrystalline silicon germanium (μc-SiGe:H), are formed by plasma enhanced chemical vapor deposition (PECVD) methods from SiH4, GeH4, and H2. Thin film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8612a5ef630cd1ff9980c056c4a22568
https://doi.org/10.1149/09805.0177ecst
https://doi.org/10.1149/09805.0177ecst
Publikováno v:
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
We simulated the growth of SiGe alloys by using reactive force-field (ReaxFF) molecular dynamics simulations in binary systems of SiH x and GeH x and identify the effect of gaseous species on the compositions and crystallinity in alloys. The composit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5160c725a5f7d6c5b7d56dd47af0857e
https://doi.org/10.1109/sispad54002.2021.9592596
https://doi.org/10.1109/sispad54002.2021.9592596
Autor:
Koki Ono, Takashi Koide, Kenji Ishikawa, Hiromasa Tanaka, Hiroki Kondo, Ayae Sugawara-Narutaki, Yong Jin, Shigeo Yasuhara, Masaru Hori, Wakana Takeuchi
Publikováno v:
Japanese Journal of Applied Physics. 62:SA1017
Silicon carbide (SiC) was coated onto carbon nanowall (CNW) scaffolds using chemical vapor deposition with a vinylsilane precursor at 700 °C to investigate the influence of the wall edge width, wall-to-wall distance, and surface morphology. The wall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f98212364f11fac36b3d0ca294fc0ff
https://doi.org/10.35848/1347-4065/ac9319
https://doi.org/10.35848/1347-4065/ac9319
Publikováno v:
Computational Materials Science. 204:111193
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5ca558cb20b5511274b7decd813d29d
https://doi.org/10.1016/j.commatsci.2022.111193
https://doi.org/10.1016/j.commatsci.2022.111193
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb065c05ca3a36d0cf92415189cbfd5b
https://doi.org/10.7567/ssdm.2020.f-1-03
https://doi.org/10.7567/ssdm.2020.f-1-03