Výsledky vyhledávání

Derivation of film characteristic constants of polycrystalline line for reliability evaluation against electromigration failure

Autor: Hiroyuki Abe, Kazuhiko Sasagawa, Masumi Saka, Masataka Hasegawa, Shigeo Uno

Publikováno v: Mechanics of Materials. 41:1090-1095

Increases in electric current density and temperature due to scaling down of IC deteriorate the reliability of the metal line. Electromigration might be one of the main damage mechanisms of the interconnecting metal line. Electromigration is a phenom

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a42751a35da9146ab56dd166b1c67a23
https://doi.org/10.1016/j.mechmat.2009.04.009

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Verification of Prediction Method for Electromigration Failure Using Angled Polycrystalline Line

Autor: Masuyuki Hasegawa, Kazuhiko Sasagawa, Masumi Saka, Shigeo Uno

Publikováno v: Key Engineering Materials. :263-268

Electromigration is one of the main damage mechanisms of interconnecting metal lines. Recently, a governing parameter for electromigration damage in passivated polycrystalline lines, AFD* gen, was formulated, and a prediction method for electromigrat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e70ae72c3f742690c5226f5f6abbaaad
https://doi.org/10.4028/www.scientific.net/kem.297-300.263

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Edge channels in integer and fractional quantum-Hall regime investigated by magnetocapacitance

Autor: Shigeo Uno, Kazuo Nakamura, Kazuo Murase, Kenichi Oto, Fumiyuki Nihey, Sadao Takaoka

Publikováno v: Physica B: Condensed Matter. :440-444

We have evaluated the width of edge channels in the fractional and integer quantum-Hall (QH) regime by the magnetocapacitance measurement between a gate and two-dimensional electron system in GaAs/AlGaAs heterostructures. The frequency dependence of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c7d1275154203ac7b9b7d19bc731a126
https://doi.org/10.1016/s0921-4526(98)00157-4

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Effect of Line-Shape on Threshold Current Density of Electromigration Damage in Bamboo Lines

Autor: Kazuhiko Sasagawa, Nao Yamaji, Masumi Saka, Shigeo Uno

Publikováno v: Advances in Electronic Packaging, Parts A, B, and C.

It is known that there is the threshold current density of the electromigration damage in the via-connected line. The evaluation of the threshold current density is one of the great interests from the viewpoint of IC reliability. In this study, a met

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9d79662d5ebf98746a8f7afa4e637178
https://doi.org/10.1115/ipack2005-73133

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