Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Shigeo Furuta"'
Autor:
Masatoshi Ono, Yasuhisa Naitoh, Tsuyoshi Takahashi, Yuichiro Masuda, Shigeo Furuta, Tetsuo Shimizu
Publikováno v:
ECS Transactions. 50:71-76
As one of the candidates of a next-generation memory, we study the memory element using resistance change of the metal nanogap. Since this element has many advantages, for example, quite simple structure, wide material selectivity, high-speed program
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0362f49600c2ca02022af47f3d9ccbff
https://doi.org/10.1149/05034.0071ecst
https://doi.org/10.1149/05034.0071ecst
Autor:
Tetsuo Shimizu, Shigeo Furuta, Masatoshi Ono, Masayo Horikawa, Tsuyoshi Takahashi, Yasuhisa Naitoh
Publikováno v:
Japanese Journal of Applied Physics. 47:1806-1812
Oblique deposition was used to fabricate two metal electrodes separated by a gap of less than 10 nm on a SiO2 substrate. By sweeping voltage between these electrodes, a negative resistance change of several digits was observed in vacuum. In this work
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a6f12222df602b8639f6a559a368c5e
https://doi.org/10.1143/jjap.47.1806
https://doi.org/10.1143/jjap.47.1806
Publikováno v:
Journal of the Surface Finishing Society of Japan. 52:773-777
Electrochemical displacement of a portion of a TiN thin film, a diffusion barrier, on a Si-based wafer with copper was examined at ambient temperature, with the ultimate purpose of developing a novel copper metallization for the manufacture of ULSI-i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20f1775fc779499fd668c8896ade1333
https://doi.org/10.4139/sfj.52.773
https://doi.org/10.4139/sfj.52.773
Autor:
Yuichiro Masuda, Masatoshi Ono, Tsuyoshi Takahashi, Tetsuo Shimizu, Shigeo Furuta, Yasuhisa Naitoh
Publikováno v:
Applied Surface Science. 256:1028-1030
The resistance switching effect of a simple gold nanogap junction was investigated. This device exhibits highly reproducible switching and nonvolatile characteristics. The resistance switching was developed for dependence of the resistance on the app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a8567fcde68d20f71dca67ebac31917
https://doi.org/10.1016/j.apsusc.2009.05.128
https://doi.org/10.1016/j.apsusc.2009.05.128
Autor:
Touru Sumiya, Ryuichi Ueki, Yasuhisa Naitoh, Takuya Nishijima, Jun-ichi Fujita, Kazuhito Tsukagoshi, Hiroshi Suga, Yosuke Miyazawa, Tetsuo Shimizu, Shigeo Furuta
Publikováno v:
ACS applied materialsinterfaces. 4(10)
A method for fabricating single-crystalline nanogaps on Si substrates was developed. Polycrystalline Pt nanowires on Si substrates were broken down by current flow under various gaseous environments. The crystal structure of the nanogap electrode was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9a51f3f23380e62076799c79b58d997
https://pubmed.ncbi.nlm.nih.gov/23054205
https://pubmed.ncbi.nlm.nih.gov/23054205
Autor:
Shigeo Furuta, Yuichiro Masuda, S. Kumaragurubaran, Masatoshi Ono, Tsuyoshi Takahashi, Yasuhisa Naitoh, Tetsuo Shimizu, Masayo Horikawa, Touru Sumiya, Y. Hayashi, Hiroshi Suga
Publikováno v:
2012 IEEE Silicon Nanoelectronics Workshop (SNW).
A 4k bits nonvolatile high-speed nanogap memory device was fabricated with a newly developed vertical nanogap structure and its memory characteristics were evaluated. The newly developed vertical nanogap structures realized controllable electrode gap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4109848eec9c4b091f033bc0a25c3a37
https://doi.org/10.1109/snw.2012.6243334
https://doi.org/10.1109/snw.2012.6243334
Autor:
Tetsuo Shimizu, Shigeo Furuta, Masayo Horikawa, Yuichiro Masuda, S. Kumaragurubaran, Yasuhisa Naitoh, Hiroshi Suga
Publikováno v:
Journal of Applied Physics. 112:044309
Resistance switching in nanogap electrodes, the electrodes of which are made of platinum and gold, was investigated in air. The “off-to-on” transition in air was achieved by voltage sweeping enforced with a current-compliance operation that suppr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c1638f910c1aa8494ecd047a9df8a72
https://doi.org/10.1063/1.4748277
https://doi.org/10.1063/1.4748277
Autor:
Yasuhisa Naitoh, Masayo Horikawa, Hiroshi Suga, Tetsuo Shimizu, Shigeo Furuta, Yuichiro Masuda, Touru Sumiya, Tsuyoshi Takahashi, Masatoshi Ono
Publikováno v:
ECS Meeting Abstracts. :2849-2849
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3d7d6aa9084bd8b921dc69241eab959
https://doi.org/10.1149/ma2012-02/37/2849
https://doi.org/10.1149/ma2012-02/37/2849