Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Shigenori Kato"'
Autor:
Shigenori Kato, Kazuo Yamada, Tetsuharu Kako, Toshihisa Tajima, Akihiko Iida, Yoshihiro Ito, Chikako Sato, Hidehiro Kabasawa, Hiroaki Hibino, Noriyuki Matsukawa, Kenji Okita, Yoji Goto, Yoshihiko Horimoto, Kazuya Nokura, Aki Inagaki, Emi Hayashi
Publikováno v:
Journal of Neurology. 267:2692-2696
Although pure cerebellar ataxia is usually emphasized as the characteristic clinical feature of spinocerebellar ataxia type 6 (SCA6), parkinsonism has been repeatedly described in patients with genetically confirmed SCA6. We conducted a positron emis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::281aeb7588ef03e770ec7fbbc7721bd4
https://doi.org/10.1007/s00415-020-09908-y
https://doi.org/10.1007/s00415-020-09908-y
XRD analysis of TRAM composed from [Sb2Te3/GeTe] superlattice film and its switching characteristics
Publikováno v:
MRS Proceedings. 1729:41-45
We studied GeTe structures in topological switching random access memories (TRAMs) with a [GeTe/Sb2Te3] superlattice by using X-ray diffraction (XRD) analysis. We examined the electrical characteristics of the TRAMs deposited at different temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8525b88ed79ecab00915e9a1f91bba6e
https://doi.org/10.1557/opl.2015.170
https://doi.org/10.1557/opl.2015.170
Autor:
Shigeo Riku, Ian R.1 shigeo_riku@chukyo-hosp.jp, Shigenori Kato, Ian R.
Publikováno v:
Neuropathology. Dec2003, Vol. 23 Issue 4, p335-344. 10p.
Publikováno v:
Materials Science Forum. :455-458
We investigated the atomistic mechanism of N incorporation during SiC oxidation by the first principles calculation. We found that N atoms play two characteristic roles in NO oxidation of SiC surface. One is that N atoms tend to form three-fold coord
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74a8a8c3b61e1b0889d1470956a4addc
https://doi.org/10.4028/www.scientific.net/msf.740-742.455
https://doi.org/10.4028/www.scientific.net/msf.740-742.455
Publikováno v:
Materials Science Forum. :409-412
We demonstrate that the formation of carbonate-like moiety in SiO2 could be the origin of negative fixed charge in SiC thermal wet oxidation, based on first-principles calculations. We find that negative CO3 ion appears in SiO2 due to not only the ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5df04c01e4f1830d8cafd750265ccb3e
https://doi.org/10.4028/www.scientific.net/msf.740-742.409
https://doi.org/10.4028/www.scientific.net/msf.740-742.409
Publikováno v:
Materials Science Forum. :469-472
Our message is oxidation process must be minimized as possible. Many carbon-related defect structures are reported in SiC/SiO2 interface. In this paper, we investigated the effect of oxidation to the defect forming by density functional theory (DFT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da60f3faaed0a6a450f6b5330da42b75
https://doi.org/10.4028/www.scientific.net/msf.740-742.469
https://doi.org/10.4028/www.scientific.net/msf.740-742.469
Publikováno v:
Rinsho shinkeigaku = Clinical neurology. 56(11)
We present the case of a 77-year-old man with a 10-year history of Parkinson disease (PD), who developed posterior reversible encephalopathy syndrome (PRES). We diagnosed the case as PRES based on clinical features and MRI findings. He experienced or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9400be9d91cb850b57f52aae63f7be50
https://pubmed.ncbi.nlm.nih.gov/27773902
https://pubmed.ncbi.nlm.nih.gov/27773902
Autor:
Naoki Atsuta, Mizuki Ito, Tomotsugu Kaga, Joe Senda, Tomohiko Nakamura, Hirohisa Watanabe, Gen Sobue, Fumiaki Tanaka, Shigenori Kato, Shinji Naganawa
Publikováno v:
Amyotrophic Lateral Sclerosis. 12:59-69
We investigated 17 patients with sporadic amyotrophic lateral sclerosis (ALS) using voxel-based morphometry (VBM) and voxel-based analysis of diffusion tensor images (DTI) at baseline and after a six-month follow-up. Compared with 17 healthy controls
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61b6c209350d4cb49ad216d6bd59c1be
https://doi.org/10.3109/17482968.2010.517850
https://doi.org/10.3109/17482968.2010.517850
Autor:
K. Akita, Masaaki Araidai, Norikatsu Takaura, Takahiro Morikawa, Hiroki Shirakawa, Kenji Shiraishi, Shigenori Kato, M. Kinoshita, M. Tai, T. Ohyanagi
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
A 1T-1R pillar-type “topological-switching RAM” (TRAM) and the data retention of GeTe/Sb 2 Te 3 super-lattice were investigated. Reset voltage of TRAM, 2 V, was 40 % of that of the conventional PCM with Ge 2 Sb 2 Te 5 . From data retention evalua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c92afeb99020be7b2c556bec4ba0295a
https://doi.org/10.1109/vlsit.2014.6894436
https://doi.org/10.1109/vlsit.2014.6894436
Autor:
Norikatsu Takaura, M. Kitamura, T. Ohyanagi, M. Kinoshita, Katsumasa Kamiya, Kenji Shiraishi, T. Yamamoto, Shigenori Kato, K. Akita, Takahiro Morikawa, Masaaki Araidai, M. Tai
Publikováno v:
2014 International Conference on Microelectronic Test Structures (ICMTS).
We describe the switching mechanism of GeTe/Sb 2 Te 3 phase change memory called “topological-switching Random Access Memory” (TRAM). DC sweep and AC transient analysis of the TRAM TEGs provided evidence of enhancement of atomic movement in TRAM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::332e056a1a92a2cda5436915ee32099a
https://doi.org/10.1109/icmts.2014.6841464
https://doi.org/10.1109/icmts.2014.6841464