Zobrazeno 1 - 10
of 154
pro vyhledávání: '"Shigenobu Yamakoshi"'
Autor:
Yuki Ueda, Takuya Igarashi, Kimiyoshi Koshi, Shigenobu Yamakoshi, Kohei Sasaki, Akito Kuramata
Publikováno v:
Japanese Journal of Applied Physics. 62:SF1006
The growth of large-diameter high-resistivity β-Ga2O3 (010) substrates is important for the low-cost production of lateral Ga2O3 devices. We grew a 2 inch diameter Fe-doped high-resistivity β-Ga2O3 (010) single crystal by using the vertical Bridgma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a59de6000eb4e26f31935585c5a7bc4
https://doi.org/10.35848/1347-4065/acb55a
https://doi.org/10.35848/1347-4065/acb55a
Autor:
Ken Goto, Hisashi Murakami, Akito Kuramata, Shigenobu Yamakoshi, Masataka Higashiwaki, Yoshinao Kumagai
Publikováno v:
Applied Physics Letters. 120:102102
The influence of substrate orientation on homoepitaxial growth of beta-gallium oxide by halide vapor phase epitaxy was investigated. Substrates were cut at various angles Δb from the (001) plane ( Δb = 0°) to the (010) plane ( Δb = 90°) of bulk
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7a156b63b459ff92a2d6667803bf150
https://doi.org/10.1063/5.0087609
https://doi.org/10.1063/5.0087609
Autor:
Masataka Higashiwaki, Akito Kuramata, Bo Monemar, Keita Konishi, Hisashi Murakami, Shigenobu Yamakoshi, Rie Togashi, Yoshinao Kumagai, Ken Goto
Publikováno v:
Journal of Crystal Growth. 492:39-44
Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy (HVPE) using O2 or H2O as an oxygen source was investigated by thermodynamic analysis, and compared with measured properties after growth. The thermodynamic analysis revealed that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66362ec1a8f6387c45686490cb22d4b5
https://doi.org/10.1016/j.jcrysgro.2018.04.009
https://doi.org/10.1016/j.jcrysgro.2018.04.009
Publikováno v:
Gallium Oxide ISBN: 9783030371524
This chapter explains homoepitaxial growth of β-Ga2O3 by using ozone-enhanced molecular beam epitaxy (MBE). First, in order to reveal the suitable surface orientation for β-Ga2O3 homoepitaxial MBE growth, we investigate the surface orientation depe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34d0ab30eda3f9bc28eb4806cdf858c7
https://doi.org/10.1007/978-3-030-37153-1_7
https://doi.org/10.1007/978-3-030-37153-1_7
Autor:
Shigenobu Yamakoshi, Akito Kuramata, Masataka Higashiwaki, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Keita Konishi, Ken Goto
Publikováno v:
Thin Solid Films. 666:182-184
Silicon doped homoepitaxial films were grown on beta‑gallium oxide (001) substrates by halide vapor phase epitaxy using gallium monochloride, oxygen and silicon tetrachloride gases as precursors. It was confirmed that the n-type carrier density at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eee25f031aa2109355e22b741947bd61
https://doi.org/10.1016/j.tsf.2018.09.006
https://doi.org/10.1016/j.tsf.2018.09.006
Autor:
James W Pomeroy, Masataka Higashiwaki, Shigenobu Yamakoshi, Martin Kuball, Serge Karboyan, Akito Kuramata, Taylor Moule, Michael J. Uren, Kohei Sasaki, Manikant Singh, Man Hoi Wong
Publikováno v:
2019 Compound Semiconductor Week (CSW).
The reliability of field-plated $\beta$ -Ga 2 O 3 power MOSFETs is investigated by means of transient-current measurements. Both steady state and pulsed high bias, gate-drain stresses are applied to the devices and the change and recovery in RON, att
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5d41bd6de297994917434d9f7f5606f
https://doi.org/10.1109/iciprm.2019.8819296
https://doi.org/10.1109/iciprm.2019.8819296
Publikováno v:
Oxide-based Materials and Devices X.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::778090f24ecf5869c8d0d20070a63ffc
https://doi.org/10.1117/12.2515491
https://doi.org/10.1117/12.2515491
Autor:
Akito Kuramata, Masataka Higashiwaki, Tomohiro Yamaguchi, Shigenobu Yamakoshi, Tohru Honda, Kohei Sasaki, Takeyoshi Onuma
Publikováno v:
Applied Physics Letters. 118:252101
Polarized infrared reflectance spectra from β-Ga2O3 (001) unintentionally doped (undoped) and Sn-doped substrates were investigated. Spectra from an undoped homoepitaxial film grown on the Sn-doped substrate were also investigated. By setting the el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bba0fc4a4fcad1849ab25628792fe7ed
https://doi.org/10.1063/5.0059070
https://doi.org/10.1063/5.0059070
Autor:
Shigenobu Yamakoshi, Kohei Sasaki, Daiki Wakimoto, Yuki Koishikawa, Masataka Higashiwaki, Akito Kuramata, Quang Tu Thieu
Publikováno v:
IEEE Electron Device Letters. 38:783-785
We developed $\beta $ -Ga2O3 trench MOS-type Schottky barrier diodes (MOSSBDs) for the first time. A Si-doped Ga2O3 layer was grown via halide vapor phase epitaxy on a single-crystal Sn-doped $\beta $ -Ga2O3 (001) substrate. The trench structure was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16abbde289c4ceb267be91ce82f7c47b
https://doi.org/10.1109/led.2017.2696986
https://doi.org/10.1109/led.2017.2696986
Publikováno v:
Encyclopedic Handbook of Integrated Optics ISBN: 9781315220949
A semiconductor device including a substrate having a low substrate surface formed in the substrate with a first gentle slope from the substrate surface; a single crystalline layer formed on the low substrate surface nearly level with the substrate s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40a3efe45d87d48fca1c029f806e77f2
https://doi.org/10.1201/9781315220949-36
https://doi.org/10.1201/9781315220949-36