Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Shigeki Shimomura"'
Publikováno v:
Journal of The Electrochemical Society. 141:192-205
The surface of positive photoresist is hardened by the ion implantation process and becomes very difficult to remove thereafter. To investigate this phenomenon, the following aspects of photoresist were investigated: (i) the effectiveness of low‐en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::913f8d28f2a8cbdc6c642a148fa19a42
https://doi.org/10.1149/1.2054683
https://doi.org/10.1149/1.2054683
Publikováno v:
Journal of The Electrochemical Society. 139:1721-1730
The addition of small amounts of surfactant and hydrogen peroxide (H 2 O 2 ) to the developer is shown to improve the performance of the photoresist development process. Exposed photoresist areas are dissolved more uniformly, the smoothness of Si sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00157985d74574f6f21b938769daf1c1
https://doi.org/10.1149/1.2069483
https://doi.org/10.1149/1.2069483
Publikováno v:
Advances in Resist Technology and Processing XI.
We have demonstrated that highly reliable resist patterning is achieved by effectively removing reaction products by means of ultrasonic development and the addition of surfactant to the developer. It has been found that the reaction products form a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcf4135a751c5b6054539bdfccfd16ed
https://doi.org/10.1117/12.175394
https://doi.org/10.1117/12.175394
Publikováno v:
Advances in Resist Technology and Processing X.
We have demonstrated that the addition of surfactant to developer results in (1) the resolution of the contact holes as small as 0.30 micrometers with good dimension correlation, (2) an increase in the depth of focus at the minimum feature size, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e5331baee9306dc833cdc75b6c70b4e
https://doi.org/10.1117/12.154796
https://doi.org/10.1117/12.154796
Publikováno v:
Japanese Journal of Applied Physics. 33:491
Formation of high-precision fine resist patterns has been achieved by an effective removal of dissolved resist polymers, that is, the reaction products of the development process. Also, it has been found that the reaction products give rise to the de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::838d28485fdb8dbbb1786f4bc4105189
https://doi.org/10.1143/jjap.33.491
https://doi.org/10.1143/jjap.33.491
Publikováno v:
Japanese Journal of Applied Physics. 32:347
We have determined that high-sensitivity and high-resolution contact hole photoresist patterning can be achieved using an optimized combination of developer, added surfactant and ammonium chloride salt. The addition of surfactant improves the wettabi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8facfa69295c28d6f877679826506ca
https://doi.org/10.1143/jjap.32.347
https://doi.org/10.1143/jjap.32.347