Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Shigehisa Ohki"'
Autor:
Shigehisa Ohki, Suzuko Ishizawa, Mitsuo Usui, Tsuyoshi Hayashi, Shigeki Ishibashi, Hirooki Hirata, Nobutatsu Koshoubu
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 4:1582-1588
We have developed a new type of single-mode optical waveguide film with a low coefficient of thermal expansion (CTE). The low-CTE film was fabricated by sandwiching a fluorinated polyimide optical waveguide layer between low-CTE polyimide layers. Its
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::320b06ad38f96253f73727586405f733
https://doi.org/10.1109/tcpmt.2014.2345101
https://doi.org/10.1109/tcpmt.2014.2345101
Publikováno v:
Journal of the Japan Society for Precision Engineering. 73:623-626
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d6c9370645cb4fc159791c7b5663063
https://doi.org/10.2493/jjspe.73.623
https://doi.org/10.2493/jjspe.73.623
Autor:
Matsui Shinsuke, Ryo Nagase, Shigehisa Ohki, Kobayashi Masaru, Shuichi Yanagi, Shigeru Hosono
Publikováno v:
IEICE Transactions on Electronics. :1227-1232
We have developed an optical connector assembly method that allows the rapid on-site installation of an optical connector. To simplify this on-site assembly process we fabricated built-in parts that enable us to install the optical connector using pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bb4d68b7d308f9a0c60fcb2f0e27f42
https://doi.org/10.1093/ietele/e89-c.8.1227
https://doi.org/10.1093/ietele/e89-c.8.1227
Publikováno v:
Microelectronic Engineering. :417-423
An advanced image placement (IP) correction method that can compensate for localized distortions was developed to improve the IP accuracy of X-ray masks to the ultimate level. The method involves partitioning a chip into small cells, and shifting the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8110a5841cf1deb426d84239891bdea
https://doi.org/10.1016/s0167-9317(01)00460-9
https://doi.org/10.1016/s0167-9317(01)00460-9
Autor:
Shigehisa Ohki, Sunao Ishihara
Publikováno v:
Microelectronic Engineering. 30:171-178
Current achievements and future prospects of SR base x-ray lithography are explained through an account of research and development efforts made by NTT LSI Laboratories. The SR lithography system, including the compact SR light source Super-ALIS and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcab6c7a834b6e9dcef04f03e9565121
https://doi.org/10.1016/0167-9317(95)00220-0
https://doi.org/10.1016/0167-9317(95)00220-0
Publikováno v:
Microelectronic Engineering. 13:251-254
X-ray masks with four sub-half-micron 1M-DRAM chips have been fabricated for four lithography levels. A four-level mask-to-mask overlay accuracy of higher than 0.13 μm (3σ) was obtained. In these masks, the distance between chip boundaries and wind
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2508bd782b81069fac2d5369a6fe5b0b
https://doi.org/10.1016/0167-9317(91)90086-s
https://doi.org/10.1016/0167-9317(91)90086-s
Publikováno v:
Microelectronic Engineering. 11:241-244
The ECR plasma CVD system has been improved for depositing SiC films for X-ray mask membranes. This system makes it possible to deposit SiC films with small tensile stress, high optical transparency and high strength at temperatures below 800°C. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a456d011b699d6d9d7ca059f4d86a06d
https://doi.org/10.1016/0167-9317(90)90106-4
https://doi.org/10.1016/0167-9317(90)90106-4
Autor:
Yukiko Kikuchi, Shigehisa Ohki, S. Tsuboi, M. Ezaki, T. Matsuda, Yoshinori Nakayama, T. Morosawa, Hiroshi Watanabe, H. Aoyama
Publikováno v:
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387).
E-beam mask writer is an extremely important tool to fabricate the x-ray mask. E-beam writing process is required to have enough placement accuracy and CD controllability for 1X mask. A variable-shaped 100 kV e-beam mask writer EB-X3 has been develop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ee38443e68a7ef1f1891d6741ca6111
https://doi.org/10.1109/imnc.2000.872620
https://doi.org/10.1109/imnc.2000.872620
Autor:
Shigehisa Ohki, Hiroshi Watanabe, T. Matsuda, S. Tsuboi, Yoshinori Nakayama, T. Morosawa, Yukiko Kikuchi, Kenichi Saito, T. Watanabe, H. Aoyama, Masatoshi Oda, M. Ezaki
Publikováno v:
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387).
A variable-shaped electron beam (e-beam) mask writer, EB-X3 was developed for 100 nm node 1/spl times/X-ray mask fabrication. It features a stable electron column of 100 kV and the address unit of 1 nm. This paper describes delineation characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96b9ac1897aee54c4d21aaaba33529ea
https://doi.org/10.1109/imnc.2000.872648
https://doi.org/10.1109/imnc.2000.872648
Autor:
Yoshinori Nakayama, Hiroshi Watanabe, Shigehisa Ohki, Kenichi Saito, Tetsuo Morosawa, Shinji Tsuboi, Yukiko Kikuchi, Tadahito Matsuda, Yasuji Matsui, Hajime Aoyama, Mizunori Ezaki
Publikováno v:
SPIE Proceedings.
The keys to precision x-ray mask fabrication are the EB mask writer and the process of writing on a thin membrane. This paper concerns the delineation performance for 100 kV EB writing on x-ray membrane mask. We installed and evaluated an advanced EB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8a717f3c91a691c80cf728787b82087
https://doi.org/10.1117/12.390033
https://doi.org/10.1117/12.390033