Zobrazeno 1 - 10
of 527
pro vyhledávání: '"Shigeaki Zaima"'
Autor:
Shigeaki Zaima, Osamu Nakatsuka, Noriyuki Taoka, Masashi Kurosawa, Wakana Takeuchi, Mitsuo Sakashita
Publikováno v:
Science and Technology of Advanced Materials, Vol 16, Iss 4 (2015)
We review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for rea
Externí odkaz:
https://doaj.org/article/16a01cc134ec4141be69139f1ecc27ca
Autor:
Jean-Yves Rosaye, Pierre Mialhe, Jean-Pierre Charles, Mitsuo Sakashita, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima, Yukio Yasuda
Publikováno v:
Active and Passive Electronic Components, Vol 24, Iss 3, Pp 169-175 (2001)
In order to understand the degradation of the electrical operations of metal-oxide-semiconductor (MOS) devices, this work is concerned by the defects generation processes in the non-stoichiometric SiOx, area and at the SiO2 interface. For this purpos
Externí odkaz:
https://doaj.org/article/150721ea7216494db94dbcbbc3904e74
Autor:
Noriyuki Taoka, Masashi Kurosawa, Shigeaki Zaima, Osamu Nakatsuka, S. Asaba, Mitsuo Sakashita
Publikováno v:
ECS Transactions. 102:3-9
Group-IV alloy semiconductor materials are much attractive for photovoltaic application, as those realizes multijunction photovoltaic with multi-heterostructure like group-III-V compound semiconductors [1]. In addition, group-IV alloy materials are e
Autor:
Lei Miao, Masashi Kurosawa, Chengyan Liu, Ying Peng, Shigeaki Zaima, Jie Gao, Osamu Nakatsuka
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
The interest in thermoelectrics (TE) for an electrical output power by converting any kind of heat has flourished in recent years, but questions about the efficiency at the ambient temperature and safety remain unanswered. With the possibility of int
Autor:
Kouta Takahashi, Taisei Iwahashi, Yukihiro Imai, Masashi Kurosawa, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima
Publikováno v:
ECS Transactions. 86:321-328
Publikováno v:
Thin Solid Films. 645:57-63
We report the epitaxy of n-Ge layer with in situ phosphorus (P)-doping using metal-organic chemical vapor deposition (MOCVD) method with tertiary-butyl-germane and tri-ethyl-phosphine precursors. The crystalline and electrical properties of n-Ge epit
Autor:
Masahiro Fukuda, Osamu Nakatsuka, Masashi Kurosawa, Takashi Yamaha, Takanori Asano, Shigeaki Zaima, Yosuke Shimura, Syunsuke Fujinami
Publikováno v:
Materials Science in Semiconductor Processing. 70:156-161
The formation of Ge 1− x − y Si x Sn y /Ge 1− x Sn x /Ge 1− x − y Si x Sn y double heterostructures with strain-controlled Ge 1− x − y Si x Sn y layers and their crystalline properties were investigated. We achieved the epitaxial growth
Autor:
Michele Montanari, Noriyuki Taoka, Shigeaki Zaima, Giovanni Capellini, Viktoria Schlykow, Thomas Schroeder, Peter Zaumseil, Osamu Nakatsuka
Publikováno v:
Materials Science in Semiconductor Processing. 70:139-144
Electrical and optical properties of GeSn layers formed at various growth conditions under changing deposition temperature (Td) and deposition speed (vd) were systematically investigated. A high Sn content of 3.0% leads to high electron mobility and
Autor:
Osamu Nakatsuka, Isao Yoshikawa, Wakana Takeuchi, Shigeaki Zaima, Masashi Kurosawa, Mitsuo Sakashita
Publikováno v:
Materials Science in Semiconductor Processing. 70:151-155
Solid phase crystallization (SPC) of amorphous GeSn (a-GeSn) layers with a Sn content of 2% on various insulating substrates of Si3N4, sapphire, and Y2O3 have been investigated. We found that Si3N4, which has almost same value of a higher surface ene
Autor:
Masahiro Fukuda, Osamu Nakatsuka, Takashi Yamaha, Yosuke Shimura, Wakana Takeuchi, Takanori Asano, Shigeaki Zaima
Publikováno v:
Materials Science in Semiconductor Processing. 70:133-138
Impact of a local bonding structure in a Si y Ge 1-y-z Sn z thin film on the stabilization of substitutional Sn has been investigated. Ge 1-x Sn x group-IV alloy is widely studied especially for optoelectronic devices as it can become a direct bandga