Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Shigeaki Sumiya"'
Autor:
Kei Kosaka, Mitsuhiro Tanaka, Shigeaki Sumiya, Makoto Miyoshi, Jicai Zhang, Tomohiko Shibata, Takashi Egawa, Youhua Zhu
Publikováno v:
Japanese Journal of Applied Physics. 47:43-46
AlGaN films and deep ultraviolet light-emitting diode (UV-LED) structures with AlGaN multi-quantum wells (MQWs) were grown directly on 2-in.-diameter epitaxial AlN/sapphire template (AlN template) by metalorganic chemical vapor deposition (MOCVD). It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6a7663fcc9dfbe64bc929698b8a5548
https://doi.org/10.1143/jjap.47.43
https://doi.org/10.1143/jjap.47.43
Autor:
Shigeaki Sumiya, Hideto Miyake, Keiichiro Asai, Osamu Oda, H. Katsukawa, Mutsuhiro Tanaka, Tomohiko Shibata, M. Mouri, Kazumasa Hiramatsu
Publikováno v:
physica status solidi (c). :2023-2026
This paper presents crystal qualities of high-quality AlN epitaxial films on (0001)-faced sapphire and6H-SiC substrates. The AlN epitaxial films are grown using a low-pressure metal organic vapor phase epitaxy (LP-MOVPE) method. 0.5–1 μm-thick AlN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa4dca62975a26d2a33dad9fbf78a098
https://doi.org/10.1002/pssc.200303392
https://doi.org/10.1002/pssc.200303392
Autor:
Hiroyasu Ishikawa, Masahiro Sakai, Tomohiko Shibata, Osamu Oda, Shigeaki Sumiya, Masayoshi Umeno, Mitsuhiro Tanaka, Takashi Jimbo, Yoshitaka Kuraoka, Keiichiro Asai, Takashi Egawa
Publikováno v:
Journal of Crystal Growth. 244:6-11
High-quality GaN films were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy. The Hall mobility as high as 790 cm2/V s with the carrier concentration of 7.6×1016 cm−3 at 300 K along with low dislocation density of 5×
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9a4821f571998a4bc89a2b61a74a7e1
https://doi.org/10.1016/s0022-0248(02)01573-7
https://doi.org/10.1016/s0022-0248(02)01573-7
Autor:
Yuko Mizutani, Masaru Hori, Tsutomu Tsukada, Toshio Goto, Ryohei Yoshida, Seiji Samukawa, Shigeaki Sumiya, Masafumi Ito
Publikováno v:
Journal of Applied Physics. 88:576-581
Microcrystalline silicon thin films were formed on quartz substrates by ultrahigh-frequency (UHF) plasma enhanced chemical vapor deposition from a mixture of silane (SiH4) and hydrogen (H2) gases at low substrate temperatures (Ts). The UHF plasma was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28860d7586ef0dda6806f9828ead87fb
https://doi.org/10.1063/1.373698
https://doi.org/10.1063/1.373698
Autor:
Shigeaki Sumiya, Toshio Goto, B. Mebarki, Seiji Samukawa, Tsutomu Tsukada, Masafumi Ito, Masaru Hori, Ryohei Yoshida
Publikováno v:
Materials Letters. 41:16-19
Polycrystalline silicon (poly-Si) thin films with crystalline fraction of nearly 75% and 82% were successfully synthesized at low substrate temperatures of 100 and 300°C, respectively, by using ultra-high-frequency plasma employed silane/hydrogen mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14f707cb72df9797d49d030fdf219536
https://doi.org/10.1016/s0167-577x(99)00097-x
https://doi.org/10.1016/s0167-577x(99)00097-x
Autor:
Mitsuhiro Tanaka, Yoshitaka Kuraoka, Keiichiro Asai, Osamu Oda, Takashi Egawa, Hiroyasu Ishikawa, Takashi Jimbo, Subramaniam Arulkumaran, Tomohiko Shibata, Masahiro Sakai, Shigeaki Sumiya
Publikováno v:
APPLIED PHYSICS LETTERS. 81(6):1131-1133
High-electron-mobility transistors (HEMTs) have been demonstrated on both AlN/sapphire templates and sapphire substrates, and the dc characteristics of the fabricated devices were examined at room temperature. Better dc characteristics with high extr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fff55ada7b473a51c6e215c21239673f
http://id.nii.ac.jp/1476/00005072/
http://id.nii.ac.jp/1476/00005072/
Autor:
Takayuki Sota, Tomohiko Shibata, Keiichiro Asai, Shigeaki Sumiya, Mitsuhiro Tanaka, Takeyoshi Onuma, Shigefusa F. Chichibu
Publikováno v:
Applied Physics Letters. 81:652-654
Exciton resonance energies in an AlN epilayer on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy were determined as a function of temperature by means of optical reflectance (OR) and cathodoluminescence measurements.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fe2f2881a3f09c30359156549bd1a5f
https://doi.org/10.1063/1.1493666
https://doi.org/10.1063/1.1493666
Autor:
Hideto Miyake, Osamu Oda, Tomohiko Shibata, Shigeaki Sumiya, Kazumasa Hiramatsu, Keiichiro Asai, Mitsuhiro Tanaka, Teruyo Nagai
Publikováno v:
MRS Proceedings. 693
This paper presents the correlation between overall crystal mosaicities and dislocation behaviors of high-quality AlN epitaxial films grown on a C-plane sapphire substrate using a low-pressure metal organic vapor phase epitaxy (LP-MOVPE) method. Typi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbc6a598cb8742a7b6938f90cb983cdf
https://doi.org/10.1557/proc-693-i9.3.1
https://doi.org/10.1557/proc-693-i9.3.1
Autor:
Keiichiro Asai, Teruyo Nagai, Yoshihiro Kida, Kazumasa Hiramatsu, Tomohiko Shibata, Osamu Oda, Hideto Miyake, Shigeaki Sumiya, Mitsuhiro Tanaka
Publikováno v:
MRS Proceedings. 693
We demonstrate high-quality epitaxial AlN films on C-plane sapphire as a new buffer layer technique for the growth of high-quality GaN. The obtained GaN films were atomically flat and the full width at half maximum (FWHM) values of the X-ray rocking
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae6aea1d012a78453d9fdb56f740cf82
https://doi.org/10.1557/proc-693-i3.48.1
https://doi.org/10.1557/proc-693-i3.48.1
Publikováno v:
Japanese Journal of Applied Physics. 49:022102
The authors demonstrate AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) on high-quality AlN/sapphire template (AlN template) by evaluating its characteristics. LED structures can be grown directly on 2-in.-diameter AlN template by metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1df6e8dfc9996b18216d959ef7f8192
https://doi.org/10.1143/jjap.49.022102
https://doi.org/10.1143/jjap.49.022102