Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Shigeaki Kishida"'
Autor:
Ikeda Takuya, Yasunori Andoh, Mami N. Fujii, Daisuke Matsuo, Yoshitaka Setogucti, Ryoko Miyanaga, Yukiharu Uraoka, Shigeaki Kishida
Publikováno v:
2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
The reliability of oxide semiconductor TFT and the method to lower the process temperature have become serious problems. In order to solve these problems we have developed inductively coupled plasma sputtering equipment that can control the Radio Fre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9587936a0764d680a9bb63d71f96d44e
https://doi.org/10.1109/imfedk48381.2019.8950695
https://doi.org/10.1109/imfedk48381.2019.8950695
Autor:
Daisuke Matsuo, Takuya Ikeda, Shigeaki Kishida, Yoshitaka Setoguchi, Yasunori Andoh, Eiji Takahashi
Publikováno v:
Proceedings of the International Display Workshops. :331
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::155f5a08a0b41139dfd7d2e0af7f1845
https://doi.org/10.36463/idw.2020.0331
https://doi.org/10.36463/idw.2020.0331
Autor:
Ryoko Miyanaga, Daisuke Matsuo, Yukiharu Uraoka, Yoshitaka Setogucti, Takuya Ikeda, Yasunori Andoh, Shigeaki Kishida, Mami N. Fujii
Publikováno v:
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
This report shows that an amorphous a-InGaZnO (IGZO) thin film transistor (TFT) can control the threshold voltage ( $V_{th}$ ) without thermal annealing process when depositing a-IGZO using an inductively coupled plasma (ICP) sputtering system. A two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7e3e68223cbfad4a9e49984d9c8026d
https://doi.org/10.23919/am-fpd.2018.8437432
https://doi.org/10.23919/am-fpd.2018.8437432
Autor:
Kiyoshi Kubota, Eiji Takahashi, Kiyoshi Ogata, Yukiharu Uraoka, Takashi Fuyuki, Shigeaki Kishida, Hiroya Kirimura
Publikováno v:
Japanese Journal of Applied Physics. 43:7929-7933
As a novel direct deposition method of microcrystalline silicon, we have developed the high-density and low-potential plasma-enhanced silane generating chemical vapor deposition (CVD) system. We have studied a two-step deposition process which consis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a65673a6dccd343e73e0735f676106a7
https://doi.org/10.1143/jjap.43.7929
https://doi.org/10.1143/jjap.43.7929