Hall effect in a p-type poly-Si thin-film transistor with Hall terminals.

Autor: Shiga, Haruki, Yoshikawa, Akito, Matsumoto, Takaaki, Miyamura, Shogo, Matsuda, Tokiyoshi, Kimura, Mutsumi, Ozawa, Tokuro, Aoki, Koji, Kuo, Chih-Che

Publikováno v: 2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK); 2015, p78-79, 2p