Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Shibun Tsuda"'
Autor:
Yoshiki Yamamoto, Kazuhiko Segi, Shibun Tsuda, Hideki Makiyama, Takumi Hasegawa, Keiichi Maekawa, Hiroki Shinkawata, Tomohiro Yamashita
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 825-828 (2019)
This paper reports new findings about the plasma-induced damage on silicon on thin buried oxide (BOX) transistor. The plasma charge collected by source or drain causes Vth shift, which depends on BOX thickness. In addition, the observation was made t
Externí odkaz:
https://doaj.org/article/3b959f8b90d34fc6ad7bbb408fe5fe6f
Autor:
Tomohiro Hayashi, Yasuo Yamaguchi, Shibun Tsuda, Eiji Tsukuda, Kenichiro Sonoda, Tomohiro Yamashita, Yutaka Akiyama
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
Program characteristics of FinFET split-gate metal oxide nitride oxide silicon (SG-MONOS) is analyzed using TCAD simulation. Source-side injection (SSI) program is found to be insensitive to the field enhancement at Fin corners in contrast to FN prog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a35662cd190d579ddc0e859629c70ae1
https://doi.org/10.1109/edtm.2019.8731239
https://doi.org/10.1109/edtm.2019.8731239
Autor:
Hideki Makiyama, Hiroki Shinkawata, Takumi Hasegawa, Kazuhiko Segi, Tomohiro Yamashita, Yoshiki Yamamoto, Keiichi Maekawa, Shibun Tsuda
Publikováno v:
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
This paper reports new findings about the plasma induced damage on silicon on thin BOX. The plasma charge collected by source or drain causes Vth shift, which depends on BOX thickness. In addition, the plasma charge collected by gate also has same ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d85b7bf0f6ff076f42584b79308e26a
https://doi.org/10.1109/s3s.2018.8640129
https://doi.org/10.1109/s3s.2018.8640129
Autor:
Kenichiro Sonoda, Yasuo Yamaguchi, Tomohiro Yamashita, Shibun Tsuda, Tomohiro Hayashi, Eiji Tsukuda, Yutaka Akiyama
Publikováno v:
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
The effect of field enhancement at Fin corners on program characteristics of FinFET Split-gate metal oxide nitride oxide silicon (SG-MONOS) is analyzed. The program characteristics using source-side injection (SSI) are found to be insensitive to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::536bbad7c1f64d4da3220a3d4be98ffa
https://doi.org/10.1109/sispad.2018.8551742
https://doi.org/10.1109/sispad.2018.8551742
Autor:
Shibun Tsuda, Digh Hisamoto, Masao Inoue, Kenichiro Sonoda, S. Narumi, Yasuo Yamaguchi, Atsushi Yoshitomi, Tatsuyoshi Mihara, Seiji Muranaka, Tomohiro Yamashita, Yoshiyuki Kawashima, Takahiro Maruyama
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
FinFET split-gate metal-oxide nitride oxide silicon (SG-MONOS) Flash memories have been fabricated and operated for the first time. Excellent subthreshold characteristics and small threshold-voltage variability owing to a Fin-structure are clarified.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96e4d9bb0ee35587319687b503cb1d5c
https://doi.org/10.1109/iedm.2016.7838393
https://doi.org/10.1109/iedm.2016.7838393
Autor:
Makoto Ogasawara, Tatsuo Shimizu, Keiichi Maekawa, H. Aono, Yasuo Yamaguchi, Yoshida Tetsuya, Shibun Tsuda
Publikováno v:
Japanese Journal of Applied Physics. 57:04FD16
We investigate the effect of fluorine implanted in the polycrystalline silicon (poly-Si) gate and source/drain (S/D) region on negative bias temperature instability (NBTI) improvement. It is found that there is a trade-off implantation energy depende
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bff46867a9e0600d1f69fb77f685b344
https://doi.org/10.7567/jjap.57.04fd16
https://doi.org/10.7567/jjap.57.04fd16
Publikováno v:
Journal of the Physical Society of Japan; 2019, Vol. 88 Issue 7, p074707-1-074707-6, 6p
Autor:
Minh-Hai Nguyen1 mn455@cornell.edu, Shibun Tsuda1, Daiju Teresawa2, Akira Fukuda2, Yangdong Zheng3, Anju Sawada3
Publikováno v:
Physical Review B: Condensed Matter & Materials Physics. Jan2014, Vol. 89 Issue 4, p041403-1-041403-5. 5p.
Autor:
Tetsuya Yoshida, Keiichi Maekawa, Shibun Tsuda, Tatsuo Shimizu, Makoto Ogasawara, Hideki Aono, Yasuo Yamaguchi
Publikováno v:
Japanese Journal of Applied Physics; Apr2018, Vol. 57 Issue 4S, p1-1, 1p
Autor:
Shibun Tsuda1 shibun@scphys.kyoto-u.ac.jp, Minh-Hai Nguyen1,2, Daiju Terasawa3, Akira Fukuda3, Anju Sawada4
Publikováno v:
Physical Review B. Mar2016, Vol. 93 Issue 12, p1-1. 1p.