Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Shiau-Yuan Huang"'
Publikováno v:
Nanomaterials, Vol 11, Iss 9, p 2316 (2021)
Spinel ZnGa2O4 films were grown on c-plane sapphire substrates at the substrate temperature of 400 °C by radio-frequency magnetron sputtering. Post thermal annealing was employed at the annealing temperature of 700 °C in order to enhance their crys
Externí odkaz:
https://doaj.org/article/f39bf9abcda247fc9b9d49e13d930d8a
Autor:
Shiau-Yuan Huang, 黃筱媛
106
In this thesis, ZnGa2O4 thin films were prepared on c-plane sapphire substrates by RF sputtering. Due to its wide bandgap, ZnGa2O4 films can be used for fabricating the metal-semiconductor-metal (MSM) deep ultraviolet photodetectors (DUVPDs)
In this thesis, ZnGa2O4 thin films were prepared on c-plane sapphire substrates by RF sputtering. Due to its wide bandgap, ZnGa2O4 films can be used for fabricating the metal-semiconductor-metal (MSM) deep ultraviolet photodetectors (DUVPDs)
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/f85gc9
Publikováno v:
Journal of Alloys and Compounds. 791:1213-1219
The aluminum-gallium oxide (AGO) films were prepared on c-plane sapphire substrates at a substrate temperature of 600 °C using co-sputtering from the Ga2O3 and Al targets. The Ar and O2 mixed gas was used during the film growth. The wide optical-ban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98ecdc13ba2667fd7f7574d5254a46c2
https://doi.org/10.1016/j.jallcom.2019.03.339
https://doi.org/10.1016/j.jallcom.2019.03.339
Autor:
Shuo-Huang Yuan, Sin-Liang Ou, Chien-Ming Chen, Shiau-Yuan Huang, Bo-Wen Hsiao, Dong-Sing Wuu
Publikováno v:
Ceramics International. 45:702-707
Aluminum gallium oxide (AGO) films were prepared on conventional c-plane sapphire by pulsed laser deposition (PLD). In the current PLD-AGO studies, target composition or growth temperature is usually the main deposition variable, and the other growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e22ed92c95430d5111312cf4f3975dcb
https://doi.org/10.1016/j.ceramint.2018.09.232
https://doi.org/10.1016/j.ceramint.2018.09.232
Growth and characterization of co-sputtered aluminum-gallium oxide thin films on sapphire substrates
Autor:
Ku-Yen Lin, Shiau-Yuan Huang, Shuo-Huang Yuan, Po-Wen Hsiao, Yi-An Chen, Dong-Sing Wuu, Chao-Chun Wang, Sin-Liang Ou
Publikováno v:
Journal of Alloys and Compounds. 765:894-900
Aluminum gallium oxide (AGO) films were deposited on c-plane sapphire by co-sputtering of Al and Ga2O3 targets at a substrate temperature of 600 °C, and then annealed at 900 °C to enhance their crystal quality. The effect of DC power (0, 5, 10, 30,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdda77d594a9cad88b452d0a3687bc62
https://doi.org/10.1016/j.jallcom.2018.06.270
https://doi.org/10.1016/j.jallcom.2018.06.270
Publikováno v:
IEEE Electron Device Letters. 39:220-223
A solar-blind photodetector (PD) based on the cosputtered aluminum–gallium oxide (AGO) material after thermal annealing at 900 °C has been demonstrated using a metal–semiconductor–metal structure. By incorporating optimum trace aluminum (Al),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4831083cde8ddd1a9bfbd5681527eb85
https://doi.org/10.1109/led.2017.2782693
https://doi.org/10.1109/led.2017.2782693
Publikováno v:
Nanomaterials, Vol 11, Iss 2316, p 2316 (2021)
Nanomaterials
Volume 11
Issue 9
Nanomaterials
Volume 11
Issue 9
Spinel ZnGa2O4 films were grown on c-plane sapphire substrates at the substrate temperature of 400 °C by radio-frequency magnetron sputtering. Post thermal annealing was employed at the annealing temperature of 700 °C in order to enhance their crys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7ca7cc210a631c87bd174b8b40c580e
https://doi.org/10.3390/nano11092316
https://doi.org/10.3390/nano11092316
Publikováno v:
2019 Compound Semiconductor Week (CSW).
The Al-doped gallium oxide (AGO) films were prepared on c-plane sapphire substrates at 600°C using cosputtering from Ga 2 O 3 and Al targets. An O 2 /Ar gas mixture was used during the film growth. The wide optical-bandgap and the large grain-size o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50ef284cd7b56768a92126866d826a2a
https://doi.org/10.1109/iciprm.2019.8819023
https://doi.org/10.1109/iciprm.2019.8819023
Publikováno v:
ACS applied materialsinterfaces. 11(19)
Aluminum-gallium oxide (AGO) thin films with wide bandgaps of greater than 5.0 eV were grown using pulsed laser deposition. As evidenced by X-ray photoelectron spectroscopy, X-ray diffraction, and transmission electron microscopy, the oxygen chamber
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09148e973708a47ce19a0cd57c1d14c3
https://pubmed.ncbi.nlm.nih.gov/31026139
https://pubmed.ncbi.nlm.nih.gov/31026139
Publikováno v:
Oxide-based Materials and Devices X.
Ultra-wide bandgap zinc gallium oxide (ZGO) and GO films were prepared on c-plane sapphire by conventional radio-frequency magnetron sputtering. In the current sputtered oxide studies, target composition or growth temperature is usually the main depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b3fb13c8da1f712776b9216dcff9bbf
https://doi.org/10.1117/12.2511340
https://doi.org/10.1117/12.2511340