Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Shian-Ming Liu"'
Autor:
Shian-ming Liu, 劉憲明
103
In this study, the intrinsic hydrogenated amorphous silicon oxide (a-SiOx:H) thin films was prepared by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD). High plasma density of ECR-CVD had many advantages: (1) faster depositi
In this study, the intrinsic hydrogenated amorphous silicon oxide (a-SiOx:H) thin films was prepared by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD). High plasma density of ECR-CVD had many advantages: (1) faster depositi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/8d66z8
Autor:
Yu-Lin Hsieh, I-Chen Chen, Tomi T. Li, Jenq Yang Chang, Yen-Ho Chu, Chien-Chieh Lee, Teng-Hsiang Chang, Shian-Ming Liu
Publikováno v:
Journal of Non-Crystalline Solids. 412:5-10
Hydrogenated amorphous silicon oxide (a-SiO:H) is an attractive passivation material to replace hydrogenated amorphous silicon (a-Si:H) in heterojunction solar cells due to its properties of high-transparency and a wide band gap. In this study, we in
Autor:
Yu-Lin Hsieh, Tomi T. Li, Yen-Ho Chu, I-Chen Chen, Shian-Ming Liu, Chien-Chieh Lee, Jenq-Yang Chang, Teng-Hsiang Chang
Publikováno v:
ECS Transactions. 60:1245-1250
In this study, hydrogenated amorphous silicon (a-Si:H) thin films that were deposited by the high density plasma electron cyclotron resonance chemical vapor deposition (ECRCVD) were used to study the passivation effect on the surface of c-Si substrat
Autor:
Shian-Ming Liu, Yu-Lin Hsieh, I-Chen Chen, Che-Hung Yeh, Tomi T. Li, Chien-Chieh Lee, Jenq Yang Chang, Yen-Ho Chu
Publikováno v:
2015 China Semiconductor Technology International Conference.
In this study, the intrinsic hydrogenated amorphous silicon oxide (a-SiOx:H) thin films were prepared by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD). High density plasma of ECR-CVD has many advantages: (1) faster deposition rate,
Autor:
Che-Hung Yeh, Yen-Ho Chu, Chien-Chieh Lee, Yu-Lin Hsieh, Shian-Ming Liu, Jenq-Yang Chang, I-Chen Chen, Li, Tomi T.
Publikováno v:
2015 China Semiconductor Technology International Conference; 2015, p1-3, 3p