Zobrazeno 1 - 10 of 25 pro vyhledávání: '"Shian-Jyh Lin"'
1
Dissertation/ Thesis
Process integration of devices improvement in DRAM application by millisecond flash anneal and liquid phase deposition oxide
Autor: Shian-Jyh Lin, 林瑄智
97
Process integration of device improvements in DRAM by selective liquid phase deposition oxide and millisecond flash anneal has been demonstrated. The processes of forming a bottle shape trench capacitor in DRAM have been simplified by over 60
Externí odkaz: http://ndltd.ncl.edu.tw/handle/45977710110999698398
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2
Gate-Induced Drain Leakage (GIDL) Improvement for Millisecond Flash Anneal (MFLA) in DRAM Application
Autor: B. Huang, Neng-Tai Shih, Chung-Yuan Lee, Yi-Jung Chen, Sheng-Tsung Chen, Chia Chuan Hsu, Pei-Ing Lee, Chao-Sung Lai, G. Chuang, Shian-Jyh Lin
Publikováno v: IEEE Transactions on Electron Devices. 56:1608-1617
In this paper, we successfully demonstrated gate-induced drain leakage (GIDL) improvements by millisecond flash anneal (MFLA) on a DRAM product. Fundamental studies on blanket wafers and the device characteristics of product wafers showed positive re
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d750f18bb03ac9050b690101d15895cb
https://doi.org/10.1109/ted.2009.2022689
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3
Characterizations of HfxMoyNzAlloys as Gate Electrodes for n- and p-Channel Metal Oxide Semiconductor Field Effect Transistors
Autor: Li Hsu, Yu Ching Fang, Chung Yuan Lee, Chao-Sung Lai, Chin Wei Huang, Shian Jyh Lin, Hui Chun Wang, Kung Ming Fan, Hsing Kan Peng
Publikováno v: Japanese Journal of Applied Physics. 47:2442-2445
In this article, the work functions (Φm) of hafnium–molybdenum (HfxMoy) alloys were modified using nitrogen in dc reactive cosputtering for the first time. The HfxMoyNz alloys show low resistivity and excellent thermal stability up to 900 °C. In
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::076cb164b7efd2b950ca41b95083d611
https://doi.org/10.1143/jjap.47.2442
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5
Integration of Millisecond Flash Anneal on CMOS Devices for DRAM Manufacturing
Autor: Pei-Ing Lee, B. Huang, Yi-Jung Chen, Chung-Yuan Lee, Shian-Jyh Lin, Neng-Tai Shih, Sheng-Tsung Chen, Chao-Sung Lai
Publikováno v: 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
We successfully demonstrate the millisecond flash anneal (MFLA) on a matured DRAM product. The GIDL improvements for array NMOS, periphery N and P MOS are 14.5%,15%, and 39% respectively. The mechanisms of GIDL impact at different process stages have
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::35a9b008254746a9ec319f3e7332915e
https://doi.org/10.1109/vtsa.2008.4530817
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10
Negative Bias Temperature Instability of p-Channel Metal Oxide Semiconductor Field Effect Transistor with Novel HfxMoyNzMetal Gate Electrodes
Autor: Hsing-Kan Peng, Chao-Sung Lai, Shian-Jyh Lin, Kung-Ming Fan
Publikováno v: Japanese Journal of Applied Physics. 48:04C013
The negative bias temperature instability (NBTI) characteristics of p-channel metal oxide semiconductor field effect transistor (pMOSFET) devices with novel HfxMoyNz metal gates have been investigated for the first time. The threshold voltage (Vth) s
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::10c3dcb209706fd43512b340c9f583da
https://doi.org/10.1143/jjap.48.04c013
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