Zobrazeno 1 - 10 of 12 pro vyhledávání: '"Shi-Min Ge"'
1
Mechanism and Reduction of Interlayer Peeling Defect in IGZO TFTs Formation
Autor: Shan Li, Guang Miao Wan, Cheng Gong, Shi Min Ge, Xin Nan Lin
Publikováno v: Materials Science Forum. 996:3-8
32in full high definition display devices based on back-channel etch IGZO TFTs were prepared. The mechanism of interlayer peeling defect in IGZO TFTs formation was studied. It turns out that the passivation layer was peeling with the underlying sourc
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::36aa436ab80f443021ed63bdaecf813d
https://doi.org/10.4028/www.scientific.net/msf.996.3
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4
Mechanism and Reduction of Drain Current Drop in InGaZnO Thin Film Transistors
Autor: Yu-Zhi Li, Guangmiao Wan, Xinnan Lin, Shan Li, Ze-Ke Zheng, Shi-Min Ge
Publikováno v: 2020 IEEE 3rd International Conference on Electronics Technology (ICET).
In order to solve the issue of poor gate signal transmission in display panels based on InGaZnO thin film transistors, the panels were disassembled and analyzed. The poor transmissions of the gate signal results from the drain current drop phenomenon
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aa26919efc88c90cdc1ec304fd49d1c0
https://doi.org/10.1109/icet49382.2020.9119637
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8
42-1: Development of Cu BCE-Structure IGZO TFT for a High-ppi 31-in. 8K × 4K GOA LCD
Autor: Chen Shujhih, Yang Zhao, Xu-You Liu, Longqiang Shi, Chia-Yu Lee, Wen Shi, Wei Wu, Qi-Ming Gan, Xiang-Yong Kong, Shi-Min Ge, CK Zhang, Yan-Hong Meng, Shan Li, Chung-Yi Chiu
Publikováno v: SID Symposium Digest of Technical Papers. 48:592-595
The electrical characteristics of the BCE-structure IGZO TFTs were studied. Through modifying the passivation layer and optimizing the selection of copper acid and PFA material, the TFTs exhibited good threshold voltage and reliability. Finally, a hi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::57b66764beaf4f8a5010deb00fe2099b
https://doi.org/10.1002/sdtp.11705
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