Zobrazeno 1 - 10
of 128
pro vyhledávání: '"Shi-Jie Wen"'
Publikováno v:
IEEE Access, Vol 9, Pp 137514-137523 (2021)
The methodological approach of hammering multiple rows is newly proposed to evaluate today’s SDRAMs, employed with in-DRAM mitigation circuits. The multiple rows are selected based on the one-row hammering test (single row hammering without refresh
Externí odkaz:
https://doaj.org/article/c4e20534140d4565af4a40dd9d059d34
Publikováno v:
Active and Passive Electronic Components, Vol 17, Iss 1, Pp 1-8 (1994)
A new approach of lithium electrochemical (de)intercalation material has been put forward. This approach requires a two-compound (physically or chemically) composite in which one is a chemically and electrochemically stable and porous (tunnel, cage,
Externí odkaz:
https://doaj.org/article/0dc657ddc3184fccb5cb4d1436ac40da
Publikováno v:
Active and Passive Electronic Components, Vol 16, Iss 3-4, Pp 145-152 (1994)
A new phenomenon of Li electrochemical (de)intercalation on the pure mineral clay materials has been evidenced for the first time. These tests are initialized by the idea of putting an electronic conducting polymer or a multi-valent metal oxide in th
Externí odkaz:
https://doaj.org/article/f7601677b7074550a9bd6be331ac7fcd
Autor:
Han Jia, Xin Wei, Qiu-Xia Wang, Yuan-Bo Wang, Shi-Jie Wen, Fang-Ning Fan, Qiang Wang, Zhe Wang, De-Xin Liu, Pan Huang
Publikováno v:
Petroleum Science. 20:1217-1224
Autor:
Zongru Li, Christopher Elash, Chen Jin, Li Chen, Shi-Jie Wen, Rita Fung, Jiesi Xing, Shuting Shi, Zhi Wu Yang, Bharat L. Bhuva
Publikováno v:
IEEE Transactions on Nuclear Science. 70:596-602
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 22:194-204
Autor:
Hai-Fen LI, Hao WEI, Shi-Jie WEN, Qing LU, Hao LIU, Shao-Xiong LI, Yan-Bin HONG, Xiao-Ping CHEN, Xuan-Qiang LIANG
Publikováno v:
Acta Agronomica Sinica. 48:1558-1565
Autor:
Hyeongseok Oh, Myungsun Chun, Jiwon Lee, Shi-Jie Wen, Nick Yu, Byung-Gun Park, Sanghyeon Baeg
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Publikováno v:
IEEE Transactions on Nuclear Science. 69:558-566
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:24285-24295
Self-heating (SH)-induced electrical and optical switching in high quality VO2 films grown by magnetron sputtering on a c-cut sapphire substrate has been investigated under various applied constant current pulses (ID). The effect of SH on the behavio