Zobrazeno 1 - 10
of 265
pro vyhledávání: '"Shi-Jie Wen"'
Chow, Shun Man Emily.
Thesis (M.Phil.)--Chinese University of Hong Kong, 2013.
Includes bibliographical references.
Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader.
Thesis (M.Phil.)--Chinese University of Hong Kong, 2013.
Includes bibliographical references.
Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader.
Externí odkaz:
http://library.cuhk.edu.hk/record=b5884320
http://repository.lib.cuhk.edu.hk/en/item/cuhk-327812
http://repository.lib.cuhk.edu.hk/en/item/cuhk-327812
Publikováno v:
IEEE Access, Vol 9, Pp 137514-137523 (2021)
The methodological approach of hammering multiple rows is newly proposed to evaluate today’s SDRAMs, employed with in-DRAM mitigation circuits. The multiple rows are selected based on the one-row hammering test (single row hammering without refresh
Externí odkaz:
https://doaj.org/article/c4e20534140d4565af4a40dd9d059d34
Autor:
Han Jia, Xin Wei, Qiu-Xia Wang, Yuan-Bo Wang, Shi-Jie Wen, Fang-Ning Fan, Qiang Wang, Zhe Wang, De-Xin Liu, Pan Huang
Publikováno v:
Petroleum Science. 20:1217-1224
Autor:
Zongru Li, Christopher Elash, Chen Jin, Li Chen, Shi-Jie Wen, Rita Fung, Jiesi Xing, Shuting Shi, Zhi Wu Yang, Bharat L. Bhuva
Publikováno v:
IEEE Transactions on Nuclear Science. 70:596-602
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 22:194-204
Autor:
Hai-Fen LI, Hao WEI, Shi-Jie WEN, Qing LU, Hao LIU, Shao-Xiong LI, Yan-Bin HONG, Xiao-Ping CHEN, Xuan-Qiang LIANG
Publikováno v:
Acta Agronomica Sinica. 48:1558-1565
Autor:
Hyeongseok Oh, Myungsun Chun, Jiwon Lee, Shi-Jie Wen, Nick Yu, Byung-Gun Park, Sanghyeon Baeg
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Publikováno v:
IEEE Transactions on Nuclear Science. 69:558-566
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:24285-24295
Self-heating (SH)-induced electrical and optical switching in high quality VO2 films grown by magnetron sputtering on a c-cut sapphire substrate has been investigated under various applied constant current pulses (ID). The effect of SH on the behavio
Publikováno v:
Materials; Volume 15; Issue 21; Pages: 7849
This study focuses on the effect of the substrate temperature (TS) on the quality of VO2 thin films prepared by DC magnetron sputtering. TS was varied from 350 to 600 °C and the effects on the surface morphology, microstructure, optical and electric