Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Shi-Gwan Woo"'
Publikováno v:
Korean Journal of Metals and Materials. 60:551-556
High quality Hg2Br2 crystal grown via the physical vapor transport (PVT) process is essential for the fabrication of the acousto-optic tunable filters (AOTFs) module. The full process flow, including powder purification and crystal growth, should be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4357d0c4f46157bf8d777fd49fb1015a
https://doi.org/10.3365/kjmm.2022.60.7.551
https://doi.org/10.3365/kjmm.2022.60.7.551
Publikováno v:
Crystals, Vol 10, Iss 12, p 1096 (2020)
In this study, we comparatively analyzed the physical properties of Hg2Br2 and Hg2BrxCl2−x crystals synthesized via physical vapor transport (PVT). Prior to crystal growth, the elemental mapping images obtained through scanning electron microscopy/
Externí odkaz:
https://doaj.org/article/51bc392aa2f24f30b4c455b9bbc2f7df
Autor:
Tae Hyeon Kim, Shi-Gwan Woo, In Hoi Kwon, Byung Jin Cho, Hee Tae Lee, Young-Min Kang, Gun-Eik Jang
Publikováno v:
Korean Journal of Materials Research. 28:732-737
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dd11b9e77cf2b943a16f4d3edd16415
https://doi.org/10.3740/mrsk.2018.28.12.732
https://doi.org/10.3740/mrsk.2018.28.12.732
Publikováno v:
New Physics: Sae Mulli. 67:645-649
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e92636b76e8087b3959274ce77b7a18b
https://doi.org/10.3938/npsm.67.645
https://doi.org/10.3938/npsm.67.645
Publikováno v:
Crystals, Vol 10, Iss 1096, p 1096 (2020)
Crystals
Volume 10
Issue 12
Crystals
Volume 10
Issue 12
In this study, we comparatively analyzed the physical properties of Hg2Br2 and Hg2BrxCl2&minus
x crystals synthesized via physical vapor transport (PVT). Prior to crystal growth, the elemental mapping images obtained through scanning electron mi
x crystals synthesized via physical vapor transport (PVT). Prior to crystal growth, the elemental mapping images obtained through scanning electron mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de7daca95760a1e323a7f27df56f9b7b
https://doi.org/10.3390/cryst10121096
https://doi.org/10.3390/cryst10121096
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 23:848-853
We have grown GaN nanowires by the low pressure MOCVD method on Ni deposited oxidized Si surface and have established optimum conditions by observing surface microstructure and its photoluminescence. Optimum growth temperature of , growth time of 30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3952ae7e757b9df37381f129e21bd44
https://doi.org/10.4313/jkem.2010.23.11.848
https://doi.org/10.4313/jkem.2010.23.11.848
Publikováno v:
Journal of Crystal Growth. 242:383-388
Polycrystalline GaN was grown on silica glass substrates by metalorganic chemical vapor deposition using a two-step growth process. It was found that the optical and structural properties were significantly dependent on the growth conditions of GaN b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de5771af6b9e1329f0b524ec75c7624a
https://doi.org/10.1016/s0022-0248(02)01432-x
https://doi.org/10.1016/s0022-0248(02)01432-x
Publikováno v:
Crystals (2073-4352); Dec2020, Vol. 10 Issue 12, p1096, 1p