Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Shi Yul Kim"'
Autor:
Jae-Hong Kim, Jean Ho Song, Chang Oh Jeong, Shi Yul Kim, Sung Hen Cho, Honglong Ning, Dong Ju Yang, Ki Yong Song
Publikováno v:
Key Engineering Materials. :329-334
As we know, we normally used stacked aluminum bus line as the Gate or Source/Drain layer in LCD now, but the next general LCD needs larger display area, higher resolution, and faster response time, so we need develop the new TFT bus line structure an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1f307197148d23ad88926006cb9025f
https://doi.org/10.4028/www.scientific.net/kem.428-429.329
https://doi.org/10.4028/www.scientific.net/kem.428-429.329
Publikováno v:
Journal of Information Display. 10:33-36
A new hybrid silicon thin‐film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low‐temperature poly‐Si (LTPS) and a‐Si:H TFTs on the same substrate as a backplane of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed06b5f9a94ce56b303912c4c319eb88
https://doi.org/10.1080/15980316.2009.9652077
https://doi.org/10.1080/15980316.2009.9652077
Publikováno v:
Journal of Materials Science: Materials in Electronics. 5:17-21
Polycrystalline CdS/CdTe solar cells have been prepared by coating and sintering a CdS slurry and a (Cd+Te) slurry. CdS layers were first formed on borosilicate glass substrates at 600°C in nitrogen and then CdTe layers were formed on the sintered C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12de6204c1b93e85055ba53d413dec1c
https://doi.org/10.1007/bf00717877
https://doi.org/10.1007/bf00717877
Publikováno v:
Thin Solid Films. 229:227-231
In-doped CdS films of 1 gmm thickness for a window layer of solar cells have been prepared by vacuum coevaporation of CdS and In on glass substrates at 150 °C. The In concentration in CdS films was varied from 1018 to 1021 cm−3. Structural, electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5460e80b10c8c258a1cacedd673a7bc
https://doi.org/10.1016/0040-6090(93)90369-z
https://doi.org/10.1016/0040-6090(93)90369-z
Autor:
Byoung-June Kim, Kunal Girotra, Soon-Kwon Lim, Sung-Hoon Yang, Youn-Mo Choi, Shi-Yul Kim, Jun-Hyung Souk
Publikováno v:
MRS Proceedings. 936
In the thin film transistor fabrication process, tin doped indium oxide (ITO) or zinc doped indium oxide (IZO) film can be easily exposed to hydrogen-containing plasma during the deposition of silicon nitride (SiNx) film. By this exposure, ITO or IZO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::defc662854d92025890e542675d75f24
https://doi.org/10.1557/proc-0936-l05-08
https://doi.org/10.1557/proc-0936-l05-08
Publikováno v:
MRS Proceedings. 424
Normal CrOx/Cr type color filter black matrix requires multi-layer sputtering and photo/etch processes which cause several problems such as particles generation, high production cost, and environmental issues. Various kinds of materials are being rev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06d0941ceed805e4bae6f61dde2ea911
https://doi.org/10.1557/proc-424-329
https://doi.org/10.1557/proc-424-329
Publikováno v:
Journal of Materials Science: Materials in Electronics. 4
1 Μm CdS films for the window layer of CdS/CulnSe2 solar cells have been prepared by vacuum evaporation at various deposition conditions. Deposition rates were 0.73 and 3.3 nms−1, and substrate temperature ranged from 50 to 225 ‡C. The effect of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f8868695c3ce92cc612fbd1eb467e41
https://doi.org/10.1007/bf00180470
https://doi.org/10.1007/bf00180470
Autor:
Tae-Hoon Yoon, Shi Yul Kim, Soon Joon Rho, Jang Sub Kim, Sung Tae Shin, Phil Kook Son, Jae Chang Kim
Publikováno v:
Japanese Journal of Applied Physics. 48:094503
In this paper, we propose a technique for the alignment of liquid crystals (LCs) on SiOxCy (x + y ≈2) films, where the pretilt angle can be directly controlled by adjusting the carbon content, y, of the films deposited at room temperature by obliqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d370a820aec282987538667a57935741
https://doi.org/10.1143/jjap.48.094503
https://doi.org/10.1143/jjap.48.094503
Autor:
Jun-ho Song, Chang-Oh Jeong, Sung Haeng Cho, Hyungjun Kim, Yu Gwang Jeong, Shi Yul Kim, Yong Mo Choi, Sang-soo Kim
Publikováno v:
SID Symposium Digest of Technical Papers. 40:467
A hybrid silicon technology (HyST) thin film transistor (TFT) process using a diode-pumped solid state (DPSS) laser has been developed by implementing low-temperature poly-Si (LTPS) TFTs with a-Si:H TFTs on the same substrate. HyST TFTs are deployed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4e596370e68695fe05f042b3fb9b914
https://doi.org/10.1889/1.3256816
https://doi.org/10.1889/1.3256816
Autor:
Soon Kwon Lim, Je-Hun Lee, Jang Yeon Kwon, Kyoung Seok Son, Sun Young Hong, Chang Oh Jeong, Sang Soo Kim, Dong Ju Yang, Tae Sang Kim, Hong Sik Park, Shi Yul Kim, Sang Yoon Lee, Do-Hyun Kim, Kap Soo Yoon, Pil Soon Hong
Publikováno v:
SID Symposium Digest of Technical Papers. 39:625
The world's largest (15-inch) XGA active matrix liquid crystal display (AMLCD) panel made with IGZO TFTs (W/L=29.5/4 μm) was fabricated and evaluated with the field effective mobility of 4.2±0.4 cm2/V-s, Vth of −1.3±1.4V and sub-threshold swing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a82bd6bb297ef11f06701a1243c27a17
https://doi.org/10.1889/1.3069740
https://doi.org/10.1889/1.3069740