Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Shi Wun Tong"'
Autor:
Chi Sin Tang, Xinmao Yin, Ming Yang, Di Wu, Jing Wu, Lai Mun Wong, Changjian Li, Shi Wun Tong, Yung‐Huang Chang, Fangping Ouyang, Yuan Ping Feng, Shi Jie Wang, Dongzhi Chi, Mark B. H. Breese, Wenjing Zhang, Andrivo Rusydi, Andrew T. S. Wee
Publikováno v:
Advanced Science, Vol 7, Iss 10, Pp n/a-n/a (2020)
Abstract The quasimetallic 1T′ phase 2D transition‐metal dichalcogenides (TMDs) consist of 1D zigzag metal chains stacked periodically along a single axis. This gives rise to its prominent physical properties which promises the onset of novel phy
Externí odkaz:
https://doaj.org/article/fb40d668871a4a3d8de8d33fc93f24ae
Autor:
Yiyu Zhang, Dasari Venkatakrishnarao, Michel Bosman, Wei Fu, Sarthak Das, Fabio Bussolotti, Rainer Lee, Siew Lang Teo, Ding Huang, Ivan Verzhbitskiy, Zhuojun Jiang, Zhuoling Jiang, Jianwei Chai, Shi Wun Tong, Zi-En Ooi, Calvin Pei Yu Wong, Yee Sin Ang, Kuan Eng Johnson Goh, Chit Siong Lau
Publikováno v:
ACS Nano. 17:7929-7939
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4934a613fcceb0cbe81e9745d4f878b
https://doi.org/10.1021/acsnano.3c02128
https://doi.org/10.1021/acsnano.3c02128
Autor:
Wen-Ya Wu, Fong Yew Leong, Shi Wun Tong, Hui Ru Tan, Siew Lang Teo, Yi Fan Chen, Fengxia Wei, Ming Lin, Qingyu Yan, Qiang Zhu
Publikováno v:
The Journal of Physical Chemistry C. 126:19926-19933
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa653e2f219d811ffbb9fc8f79e66859
https://doi.org/10.1021/acs.jpcc.2c06290
https://doi.org/10.1021/acs.jpcc.2c06290
Autor:
Shi Wun Tong, Man-Fai Ng
Publikováno v:
ECS Transactions. 109:17-23
Alternative channel materials for future ultra-scaled electronic devices have been intensively pursued nowadays since the feature size of silicon-based transistors has been scaled down to their physical limit. Atomically-thin semiconducting transitio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2825a0484df07bf83576b9e172aa2060
https://doi.org/10.1149/10907.0017ecst
https://doi.org/10.1149/10907.0017ecst
Autor:
Mingxi Chen, Jianwei Chai, Jing Wu, Haofei Zheng, Wen-Ya Wu, Lourembam, James, Ming Lin, Jun-Young Kim, Jaewon Kim, Kah-Wee Ang, Man-Fai Ng, Medina, Henry, Shi Wun Tong, Dongzhi Chi
Publikováno v:
Nanoscale Horizons; Jan2024, Vol. 9 Issue 1, p132-142, 11p
Publikováno v:
2022 IEEE 12th International Conference Nanomaterials: Applications & Properties (NAP).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb2a077f72719480bda4344910aade70
https://doi.org/10.1109/nap55339.2022.9934528
https://doi.org/10.1109/nap55339.2022.9934528
Autor:
Chit Siong, Lau, Jing Yee, Chee, Liemao, Cao, Zi-En, Ooi, Shi Wun, Tong, Michel, Bosman, Fabio, Bussolotti, Tianqi, Deng, Gang, Wu, Shuo-Wang, Yang, Tong, Wang, Siew Lang, Teo, Calvin Pei Yu, Wong, Jian Wei, Chai, Li, Chen, Zhong Ming, Zhang, Kah-Wee, Ang, Yee Sin, Ang, Kuan Eng Johnson, Goh
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 34(25)
Temperature-dependent transport measurements are performed on the same set of chemical vapor deposition (CVD)-grown WS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::fc19360b56c69eaf0a2148c31ba2c99b
https://pubmed.ncbi.nlm.nih.gov/34437744
https://pubmed.ncbi.nlm.nih.gov/34437744
Autor:
Shi Wun Tong, Ming Yang, Wen-Ya Wu, Jing Wu, Shijie Wang, Kedar Hippalgaonkar, Chunxiang Zhu, Dongzhi Chi, Henry Medina, Anas Abutaha, Jianwei Chai, Wugang Liao
Publikováno v:
ACS Applied Materials & Interfaces. 11:14239-14248
Growth of the large-sized and high-quality MoS2 single crystals for high-performance low-power electronic applications is an important step to pursue. Despite the significant improvement made in minimizing extrinsic MoS2 contact resistance based on i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65b4b47a92c0fae20f04c5d815e6fbdd
https://doi.org/10.1021/acsami.9b01444
https://doi.org/10.1021/acsami.9b01444
Autor:
Chit Siong Lau, Jing Yee Chee, Liemao Cao, Zi‐En Ooi, Shi Wun Tong, Michel Bosman, Fabio Bussolotti, Tianqi Deng, Gang Wu, Shuo‐Wang Yang, Tong Wang, Siew Lang Teo, Calvin Pei Yu Wong, Jian Wei Chai, Li Chen, Zhong Ming Zhang, Kah‐Wee Ang, Yee Sin Ang, Kuan Eng Johnson Goh
Publikováno v:
Advanced Materials. 34:2270189
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::214b3fad8b38f8edea52aa42fe3556ce
https://doi.org/10.1002/adma.202270189
https://doi.org/10.1002/adma.202270189
Autor:
Lingfei Wang, Shi Wun Tong, Dongzhi Chi, Kah-Wee Ang, Swee Liang Wong, Xuewei Feng, Sifan Li, Xuanyao Fong, Li Chen, Panpan Zhang
Publikováno v:
ACS nano. 15(1)
Two-terminal resistive switching devices are commonly plagued with longstanding scientific issues including interdevice variability and sneak current that lead to computational errors and high-power consumption. This necessitates the integration of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a40c63c6f7be5f37e7d0aae7dfd68ecc
https://pubmed.ncbi.nlm.nih.gov/33443417
https://pubmed.ncbi.nlm.nih.gov/33443417