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pro vyhledávání: '"Shi Qian Shao"'
Autor:
Jim C. Cheng, Wei-Cheng Lien, Ayden Maralani, Shi Qian Shao, Kristen L. Dorsey, Albert P. Pisano
Publikováno v:
Materials Science Forum. :636-639
In this work, we demonstrate the stable operation of 4H-silicon carbide (SiC) p-n diodes at temperature up to 600 °C. In-depth study methods of simulation, fabrication and characterization of the 4H-SiC p-n diode are developed. The simulation result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47dc684ba705ab5c0ca0b59dc9a02082
https://doi.org/10.4028/www.scientific.net/msf.821-823.636
https://doi.org/10.4028/www.scientific.net/msf.821-823.636
