Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Shi Chung Sun"'
Publikováno v:
IEEE Transactions on Electron Devices. 52:1399-1409
The relentless drive toward high-speed and high-density silicon-based integrated circuits (ICs) has necessitated significant advances in processing technology. The entrance of copper metallization in IC manufacturing has resulted in new challenges in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::442af06725506c8cc50130a57bb6636e
https://doi.org/10.1109/ted.2005.850642
https://doi.org/10.1109/ted.2005.850642
Publikováno v:
Journal of the American Ceramic Society. 82:351-358
The dielectric constant and leakage current density of Ba0.47Sr0.53TiO3 (BST) thin films deposited by radiofrequency magnetron sputtering on various bottom electrode materials (Pt, Ir, IrO2/Ir, Ru, RuO2/Ru) before and after annealing in O2 and N2 amb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb54639dcef00db4face1e1fb7d1a3c8
https://doi.org/10.1111/j.1551-2916.1999.tb20069.x
https://doi.org/10.1111/j.1551-2916.1999.tb20069.x
Autor:
Shoou-Jinn Chang, Uang Heay Liaw, Shi Chung Sun, Chun Hsing Liu, Jone F. Chen, Jiann Shing Lee
Publikováno v:
Japanese Journal of Applied Physics. 41:690-693
Thin Ta2O5 films were prepared by low-pressure chemical vapor deposition (LPCVD) and subsequently annealed in O2 ambient at various temperatures. It was found that the leakage current of the Ta2O5/SiOx capacitor was controlled by the Ta2O5 layer when
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e08354159d69c57c1988e29d1a2a58df
https://doi.org/10.1143/jjap.41.690
https://doi.org/10.1143/jjap.41.690
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:2986-2991
In this article, we adopted the rapid thermal oxidation (RTO) method to grow gate oxide layers on Si substrates. These RTO oxides were grown in both O2 atmosphere (dry RTO oxide) and in H2 and O2 mixed atmosphere (wet RTO oxide) at above 1000 °C. Fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e5c431af1d044e75d1593d3d42677da
https://doi.org/10.1116/1.1312374
https://doi.org/10.1116/1.1312374
Optimization of alternating PSM mask process for 65-nm poly-gate patterning using 193-nm lithography
Publikováno v:
SPIE Proceedings.
Alternating phase shift mask will be one of the most possible solutions for 65nm technology node as the further delay of 157nm lithography and next generation lithography. In this paper, alternating phase shift mask is used to pattern 65nm poly gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca50bd83702858aae2bd3a273a7942fd
https://doi.org/10.1117/12.485455
https://doi.org/10.1117/12.485455
Publikováno v:
IEEE Transactions on Electron Devices; Jul2005, Vol. 52 Issue 7, p1399-1409, 11p
Autor:
PAU ROIG
Publikováno v:
Brumal: Research Journal on the Fantastic / Revista de Investigación sobre lo Fantástico; Spring2023, Vol. 11 Issue 1, p253-274, 22p
Publikováno v:
Electronic News. 3/7/2005, Vol. 51 Issue 10, pN.PAG. 0p.
Publikováno v:
IEEE Transactions on Electron Devices; Jul2005, Vol. 52 Issue 7, p1231-1234, 4p
Autor:
Jiann-Shing Lee, 李建興
90
In this thesis two dielectric materials, silicon dioxide SiO2 and tantalum pentoxide Ta2O5, were investigated. In the development of the integrated circuit, the MOS device plays a very important role. The silicon dioxide SiO2 is used to act a
In this thesis two dielectric materials, silicon dioxide SiO2 and tantalum pentoxide Ta2O5, were investigated. In the development of the integrated circuit, the MOS device plays a very important role. The silicon dioxide SiO2 is used to act a
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/xe679m
