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Efficient fiber-to-waveguide light coupling has been a key issue in integrated photonics for many years. The main challenge lies in the huge mode mismatch between an optical fiber and a single mode waveguide. Herein, we present a novel fiber-to-waveg
Externí odkaz:
http://arxiv.org/abs/1606.00417
The field effect in metal-oxide-semiconductor (MOS) capacitors plays a key role in field-effect transistors (FETs), which are the fundamental building blocks of modern digital integrated circuits. Recent works show that the field effect can also be u
Externí odkaz:
http://arxiv.org/abs/1512.08232
Autor:
Shi, Kaifeng, Lu, Zhaolin
One of the technical barriers impeding the wide applications of integrated photonic circuits is the lack of ultracompact, high speed, broadband electro-optical (EO) modulators, which up-convert electronic signals into high bit-rate photonic data. In
Externí odkaz:
http://arxiv.org/abs/1509.08828
Autor:
Lu, Zhaolin, Shi, Kaifeng
Most dielectric materials have very weak electro-optic properties, whereas the optical properties of some plasmonic materials may be greatly tuned, especially around their plasma frequency, where dielectric constant is transiting between positive ("d
Externí odkaz:
http://arxiv.org/abs/1504.07546
Autor:
Shi, Kaifeng, Lu, Zhaolin
We experimentally demonstrate several electro-optical modulators based on transparent conducting oxides. Our previous work demonstrated the modulator structure on glass substrate with broadband bias polarity-dependent modulation. Further exploration
Externí odkaz:
http://arxiv.org/abs/1502.00651
We demonstrate greatly enhanced light absorption by monolayer graphene over a broad spectral range, from visible to near infrared, based on the attenuated total reflection. In the experiment, graphene is sandwiched between two dielectric media referr
Externí odkaz:
http://arxiv.org/abs/1309.4794
Autor:
Chen, Chang, Guo, Cong, Gao, Jian, Shi, Kaifeng, Cheng, Jingtang, Zhang, Jun, Chen, Sha, Liu, Yan, Liu, An
Publikováno v:
In Biomedicine & Pharmacotherapy March 2019 111:188-197
Recent experiments showed that unity-order index change in a transparent conducting oxide (TCO) can be achieved in a metal-oxide-semiconductor (MOS) structure by accumulation charge. However, the ultrathin (~5nm) accumulation layer and inherent absor
Externí odkaz:
http://arxiv.org/abs/1205.0502
Publikováno v:
In Optics Communications 15 December 2016 381:18-23