Zobrazeno 1 - 10
of 201
pro vyhledávání: '"Shi, Jingming"'
Publikováno v:
Nano Letters (2024)
Magneto-optical effects (MOE), interfacing the fundamental interplay between magnetism and light, have served as a powerful probe for magnetic order, band topology, and valley index. Here, based on multiferroic and topological bilayer antiferromagnet
Externí odkaz:
http://arxiv.org/abs/2403.16701
Autor:
Yan, Chaoren, Wang, Yixuan, Ma, Yandong, Liu, Hang, Tang, Selene, Li, Yansong, Shi, Jingming, Ding, Shichao, Lyu, Zhaoyuan
Publikováno v:
In Materials Today Chemistry September 2024 40
Publikováno v:
In Journal of Neurorestoratology September 2024 12(3)
Publikováno v:
Journal of Chemical Physics; 7/7/2024, Vol. 161 Issue 1, p1-8, 8p
Autor:
Wang, Zhiruo, Chen, Gong, Li, Haoyu, Liu, Jingyuan, Yang, Yuanyuan, Zhao, Cong, Li, Yunping, Shi, Jingming, Chen, Huihui, Chen, Guochun
Publikováno v:
In International Immunopharmacology 5 December 2024 142 Part B
Autor:
Wang, Xiaoping, Shi, Jingming
Publikováno v:
In Science of the Total Environment 1 June 2024 927
Autor:
Ding, Shicong, Zhang, Pan, Yang, Kang, Liu, Cailong, Hao, Jian, Cui, Wenwen, Shi, Jingming, Li, Yinwei
Changes in atomic coordination numbers at high pressures are fundamental to condensed-matter physics because they initiate the emergence of unexpected structures and phenomena. Silicon is capable of forming eight-, nine-, and ten-coordinated structur
Externí odkaz:
http://arxiv.org/abs/2107.03058
Autor:
Ding, Shicong, Shi, Jingming, Xie, Jiahao, Cui, Wenwen, Zhang, Pan, Yang, Kang, Hao, Jian, Xu, Meiling, Zeng, Qingxin, Zhang, Lijun, Li, Yinwei
The search of direct-gap Si-based semiconductors is of great interest due to the potential application in many technologically relevant fields. This work examines the incorporation of He as a possible route to form a direct band gap in Si. Structure
Externí odkaz:
http://arxiv.org/abs/2006.06319
Autor:
Shi, Jingming, Fonda, Emiliano, Botti, Silvana, Marques, Miguel A. L., Shinmei, Toru, Irifune, Tetsuo, Flank, Anne-Marie, Lagarde, Pierre, Polian, Alain, Itié, Jean-Paul, San-Miguel, Alfonso
Metallization and dissociation are key transformations in diatomic molecules at high densities particularly significant for modeling giant planets. Using X-ray absorption spectroscopy and atomistic modeling, we demonstrate that in halogens, the forma
Externí odkaz:
http://arxiv.org/abs/2004.07496
Akademický článek
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