Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Shevitski, Brian"'
Currently there is great interest in the utility of deep neural networks (DNNs) for the physical layer of radio frequency (RF) communications. In this manuscript, we describe a custom DNN specially designed to solve problems in the RF domain. Our mod
Externí odkaz:
http://arxiv.org/abs/2109.10404
Autor:
Su, Cong, Zhang, Fang, Kahn, Salman, Shevitski, Brian, Jiang, Jingwei, Dai, Chunhui, Ungar, Alex, Park, Ji-Hoon, Watanabe, Kenji, Taniguchi, Takashi, Kong, Jing, Tang, Zikang, Zhang, Wenqing, Wang, Feng, Crommie, Michael, Louie, Steven G., Aloni, Shaul, Zettl, Alex
Color center is a promising platform for quantum technologies, but their application is hindered by the typically random defect distribution and complex mesoscopic environment. Employing cathodoluminescence, we demonstrate that an ultraviolet-emittin
Externí odkaz:
http://arxiv.org/abs/2108.04747
Autor:
Dogan, Mehmet, Gilbert, S. Matt, Pham, Thang, Shevitski, Brian, Ercius, Peter, Aloni, Shaul, Zettl, Alex, Cohen, Marvin L.
Publikováno v:
Applied Physics Letters, 2020, 117, 023102
Controlling the size and shape of nanopores in two-dimensional materials is a key challenge in applications such as DNA sequencing, sieving, and quantum emission in artificial atoms. We here investigate experimentally and theoretically triangular vac
Externí odkaz:
http://arxiv.org/abs/2002.05795
Autor:
Shevitski, Brian, Chen, Christopher T., Kastl, Christoph, Kuykendall, Tevye, Schwartzberg, Adam, Aloni, Shaul, Zettl, Alex
Atomically thin polycrystalline transition-metal dichalcogenides (TMDs) are relevant to both fundamental science investigation and applications. TMD thin-films present uniquely difficult challenges to effective nanoscale crystalline characterization.
Externí odkaz:
http://arxiv.org/abs/2001.11153
Autor:
Pham, Thang, Oh, Sehoon, Stonemeyer, Scott, Shevitski, Brian, Cain, Jeffrey D., Song, Chengyu, Ercius, Peter, Cohen, Marvin L., Zettl, Alex
Publikováno v:
Phys. Rev. Lett. 124, 206403 (2020)
The synthesis of new materials with novel or useful properties is one of the most important drivers in the fields of condensed matter physics and materials science. Discoveries of this kind are especially significant when they point to promising futu
Externí odkaz:
http://arxiv.org/abs/2001.06565
Autor:
Shevitski, Brian, Ulstrup, Søren, Koch, Roland J., Cai, Hui, Tongay, Sefaattin, Moreschini, Luca, Jozwiak, Chris, Bostwick, Aaron, Zettl, Alex, Rotenberg, Eli, Aloni, Shaul
Publikováno v:
Phys. Rev. B 100, 165112 (2019)
Transition metal monochalcogenides comprise a class of two-dimensional materials with electronic band gaps that are highly sensitive to material thickness and chemical composition. Here, we explore the tunability of the electronic excitation spectrum
Externí odkaz:
http://arxiv.org/abs/1908.01003
Autor:
Shevitski, Brian, Gilbert, S. Matt, Chen, Christopher T., Kastl, Christoph, Barnard, Edward S., Wong, Ed, Ogletree, D. Frank, Watanabe, Kenji, Taniguchi, Takashi, Zettl, Alex, Aloni, Shaul
Publikováno v:
Phys. Rev. B 100, 155419 (2019)
Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color center in high-quality hexagonal boron nitride (h-BN) with a sharp emis
Externí odkaz:
http://arxiv.org/abs/1904.12107
Autor:
Gilbert, S. Matt, Pham, Thang, Dogan, Mehmet, Oh, Sehoon, Shevitski, Brian, Schumm, Gabe, Liu, Stanley, Ercius, Peter, Aloni, Shaul, Cohen, Marvin L., Zettl, Alex
The relative orientation of successive sheets, i.e. the stacking sequence, in layered two-dimensional materials is central to the electronic, thermal, and mechanical properties of the material. Often different stacking sequences have comparable cohes
Externí odkaz:
http://arxiv.org/abs/1810.04814
Autor:
Gilbert, S. Matt, Dunn, Gabriel, Pham, Thang, Shevitski, Brian, Dimitrov, Edgar, Aloni, Shaul, Zettl, Alex
We demonstrate the fabrication of individual nanopores in hexagonal boron nitride (hBN) with atomically precise control of the pore size. Previous methods of pore production in other 2D materials create pores of irregular geometry with imprecise diam
Externí odkaz:
http://arxiv.org/abs/1702.01220
Autor:
Turner, Sally, Shevitski, Brian, Long, Hu, Lorenzo, Maydelle, Marquez, James, Aloni, Shaul, Altoe, Virginia, Worsley, Marcus A., Zettl, Alex
Publikováno v:
In Carbon November 2019 153:648-656