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pro vyhledávání: '"Shermakhmat Makhkamov"'
Autor:
Mannab Tashmetov, Oksana Ismailova, Nadimbek Sulaymonov, A. B. Normurodov, Shermakhmat Makhkamov, Feruza Umarova
Publikováno v:
International Journal of Modern Physics B. 34:2050284
The influence of a single phosphorous impurity on structural and electronic properties of spherical, diamond-like, hydrogen-passivated, ultrasmall Si[Formula: see text]H[Formula: see text], Si[Formula: see text]H[Formula: see text], Si[Formula: see t
Publikováno v:
SPIE Proceedings.
The combined influence of irradiation and thermal treatment upon efficiency of formation of stable radiation defects in silicon diffusion diodes was studied by DLTS and measurements of transient characteristics. High-temperature (300 - 450 degrees Ce