Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Sheremet, Volodymyr"'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Tatarinov, Dmitry A., Anoshkin, Sergey S., Tsibizov, Ivan A., Sheremet, Volodymyr, Isik, Furkan, Zhizhchenko, Alexey Y., Cherepakhin, Artem B., Kuchmizhak, Aleksandr A., Pushkarev, Anatoly P., Demir, Hilmi Volkan, Makarov, Sergey V.
Publikováno v:
Advanced Optical Materials; Apr2023, Vol. 11 Issue 7, p1-10, 10p
Autor:
Emre Gür, Ilkay Demir, Hadis Morkoç, V. Avrutin, Oguz Gulseren, Ümit Özgür, V. N. Sheremet, Muhammet Genc, Ismail Altuntas, Sezai Elagoz, Atilla Aydinli
Publikováno v:
Proceedings of SPIE-The International Society for Optical Engineering
Date of Conference: 1-6 February 2020 Conference Name: SPIE OPTO, 2020: Gallium Nitride Materials and Devices XV 2020 In this work, the effect of introducing a photonic crystal network of silicon nitride (SiN) micro-domes on the backside of silver co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ae6b3ab21d242bf909293e644e4769d
https://aperta.ulakbim.gov.tr/record/9085
https://aperta.ulakbim.gov.tr/record/9085
Autor:
Ismail Altuntas, M. Genç, G. Eğin, M. Elci, Ilkay Demir, Ahmet Emre Kasapoğlu, Sezai Elagoz, Serkan İslamoğlu, N. Muzafferoğlu, Emre Gür, V. N. Sheremet, Oguz Gulseren, Atilla Aydinli
Publikováno v:
Superlattices and Microstructures
WOS: 000463693300002
This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series r
This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1453d4aeca5deeb468e07b116c85ccbe
https://hdl.handle.net/20.500.12418/5943
https://hdl.handle.net/20.500.12418/5943
Autor:
Ümit Özgür, Hadis Morkoç, Ismail Altuntas, V. N. Sheremet, Negar Gheshlaghi, M. Sozen, N. Sheremet, Kai Ding, Atilla Aydinli, M. Elci, V. Avrutin
Publikováno v:
Superlattices and Microstructures
WOS: 000430037600030
We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step graded electron injectors. Insertion of an InGaN str
We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step graded electron injectors. Insertion of an InGaN str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17b2ed8946d14281211a782fedba97d0
https://aperta.ulakbim.gov.tr/record/30327
https://aperta.ulakbim.gov.tr/record/30327
Autor:
V. Avrutin, M. Elçi, Atilla Aydinli, Hadis Morkoç, Kai Ding, Ümit Özgür, Ismail Altuntas, M. Genç, N. Sheremet, V. N. Sheremet, Negar Gheshlaghi
Publikováno v:
Superlattices and Microstructures
WOS: 000425566100069
Enhancement of InGaN/GaN based light emitting diode performance with step graded electron injectors through a two-step passivation is reported. Perimeter passivation of LED dies with SiO2 immediately following ICP mesa etch
Enhancement of InGaN/GaN based light emitting diode performance with step graded electron injectors through a two-step passivation is reported. Perimeter passivation of LED dies with SiO2 immediately following ICP mesa etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd9e20272008e778637f459ff9342f06
https://aperta.ulakbim.gov.tr/record/29357
https://aperta.ulakbim.gov.tr/record/29357
Autor:
V. Avrutin, M. Elçi, Atilla Aydinli, Kai Ding, Hadis Morkoç, N. Sheremet, Ümit Özgür, Ismail Altuntas, M. Genç, V. N. Sheremet
Publikováno v:
Superlattices and Microstructures
WOS: 000415768800128
The effect of a transparent ITO current spreading layer on electrical and light output properties of blue InGaN/GaN light emitting diodes (LEDs) is discussed. When finite conductivity of ITO is taken into account, unlike in
The effect of a transparent ITO current spreading layer on electrical and light output properties of blue InGaN/GaN light emitting diodes (LEDs) is discussed. When finite conductivity of ITO is taken into account, unlike in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::840c0905531341e79450d62b28ececb9
http://hdl.handle.net/11452/30256
http://hdl.handle.net/11452/30256