Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Shenyi Deng"'
Autor:
Wei Dou, Shenyi Deng, Sizhe Zeng, Jiale Zhang, Dongsheng Tang, Liuhui Lei, Yongkang Wang, Yuanyuan Tan, Weichang Zhou, Xing Yuan, Haoting Guo
Publikováno v:
RSC Advances. 11:17910-17913
Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO4 (IGZO) channel are fabricated at room temperature. Such TFTs show a low operation voltage of 1.0 V due to the large specific gate capacitance of 3.8 μF cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f29245d36c4dcfac78c6b796944eeab2
https://doi.org/10.1039/d1ra02155a
https://doi.org/10.1039/d1ra02155a
Autor:
Liuhui, Lei, Yuanyuan, Tan, Xing, Yuan, Wei, Dou, Jiale, Zhang, Yongkang, Wang, Sizhe, Zeng, Shenyi, Deng, Haoting, Guo, Weichang, Zhou, Dongsheng, Tang
Publikováno v:
RSC advances. 11(29)
Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::6444dbfd2f43560e00fa88575bac788a
https://pubmed.ncbi.nlm.nih.gov/35480189
https://pubmed.ncbi.nlm.nih.gov/35480189
Autor:
Liuhui Lei, Jiale Zhang, Sizhe Zeng, Wei Dou, Dongsheng Tang, Weichang Zhou, Yongkang Wang, Xing Yuan, Haoting Guo, Shenyi Deng, Yuanyuan Tan
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:045004
Junctionless Low-voltage electric-double-layer (EDL) thin-film transistors (TFTs) gated by solution-processed chitosan dielectric have been fabricated on paper substrate. The operating voltage is found to be as low as 1.0 V due to the large gate spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4052afe7d9729b40e79cd278ce74b2b
https://doi.org/10.1149/2162-8777/abf518
https://doi.org/10.1149/2162-8777/abf518
Autor:
Xing Yuan, Yuanyuan Tan, Liuhui Lei, Wei Dou, Jiale Zhang, Yongkang Wang, Sizhe Zeng, Shenyi Deng, Haoting Guo, Weichang Zhou, Dongsheng Tang
Publikováno v:
ECS Journal of Solid State Science & Technology; Apr2021, Vol. 10 Issue 4, p152-155, 4p