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pro vyhledávání: '"Shenyang Kang"'
Autor:
Ran Yao, Hui Li, Wei Lai, Shenyang Kang, Jili Deng, Haiyan Long, Meimei Zheng, Jinyuan Li, Yaosheng Li
Publikováno v:
The Journal of Engineering (2019)
Press-pack insulated gate bipolar transistor (IGBT) device is the key component in the voltage source converter high voltage direct current (VSC-HVDC) due the advantage of the short-circuit failure. However, it is difficult to analyse the IGBT short-
Externí odkaz:
https://doaj.org/article/5bd20a3a04f040d5bfa83c11c8e1ebf1
