Zobrazeno 1 - 10
of 158
pro vyhledávání: '"Shenoy, V. B."'
Autor:
Li, Meifang, Hannon, J. B., Tromp, R. M., Sun, Jiebing, Li, Junwen, Shenoy, V. B., Chason, E.
We have determined the equilibrium shape of graphene domains grown on Ni(111) via carbon segregation at 925{\deg}C. In situ, spatially-resolved electron diffraction measurements were used to determine the crystallographic orientation of the edges of
Externí odkaz:
http://arxiv.org/abs/1305.0580
We discuss the effects of a novel polaronic disorder in the recently proposed two-fluid model for manganites. Using effective field theory as well as direct numerical simulations, we show that this disorder can have dramatic effects in terms of the t
Externí odkaz:
http://arxiv.org/abs/1101.1370
Publikováno v:
Surface Science 582, 145-150 (2005).
We study the formation energies and repulsive interactions of monatomic steps on the TiN(001) surface, using density functional total-energy calculations. The calculated formation energy of [100] oriented steps agree well with recently reported exper
Externí odkaz:
http://arxiv.org/abs/cond-mat/0410004
Publikováno v:
Surface Science 573, L375 - L381 (2004)
In this article we show that the reconstructions of semiconductor surfaces can be determined using a genetic procedure. Coupled with highly optimized interatomic potentials, the present approach represents an efficient tool for finding and sorting go
Externí odkaz:
http://arxiv.org/abs/cond-mat/0408228
We show that the decay of sinusoidal ripples on crystal surfaces, where mass transport is limited by the attachment and detachment of atoms at the step-edges, is remarkably different from the decay behavior that has been reported until now. Unlike th
Externí odkaz:
http://arxiv.org/abs/cond-mat/0404693
Autor:
Tambe, D. T., Shenoy, V. B.
At high growth temperatures, the misfit strain at the boundary of Ge quantum dots on Si(001) is relieved by formation of trenches around the base of the islands. The depth of the trenches has been observed to saturate at a level that depends on the b
Externí odkaz:
http://arxiv.org/abs/cond-mat/0404592
Autor:
Shenoy, V. B.
We show that elongated nanowires can be grown on crystal surfaces by allowing large strained two-dimensional islands to desorb by varying the adatom supersaturation or chemical potential. The width of the wires formed in this process is determined by
Externí odkaz:
http://arxiv.org/abs/cond-mat/0403478
Publikováno v:
Surface Science, 556, 171 (2004).
Although the clean Si(001) and Ge(001) surfaces are very similar, experiments to date have shown that dimer-vacancy (DV) defects self-organize into vacancy lines (VLs) on Si(001), but not on Ge(001). In this paper, we perform empirical-potential calc
Externí odkaz:
http://arxiv.org/abs/cond-mat/0310711
Publikováno v:
Surface Science, 544, L715-L721 (2003)
Recent experimental studies have shown that well-annealed, unstrained Si(105) surfaces appear disordered and atomically rough when imaged using scanning tunnelling microscopy (STM). We construct new models for the Si(105) surface that are based on si
Externí odkaz:
http://arxiv.org/abs/cond-mat/0306547
Publikováno v:
Physical Review B, 68, 201302(R) (2003)
Recent experiments have shown that steps on Si(113) surfaces self-organize into bunches due to a competition between long-range repulsive and short-range attractive interactions. Using empirical and tight-binding interatomic potentials, we investigat
Externí odkaz:
http://arxiv.org/abs/cond-mat/0304564