Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Shengyu Bao"'
Autor:
Linbo Shan, Zongwei Wang, Lin Bao, Shengyu Bao, Yabo Qin, Yaotian Ling, Guandong Bai, John Robertson, Yimao Cai, Ru Huang
Publikováno v:
Advanced Intelligent Systems, Vol 4, Iss 8, Pp n/a-n/a (2022)
Artificial neurons are the fundamental elements in neuromorphic computing systems. Studies have revealed neuronal spike‐rate adaptation owing to intrinsic plasticity that neurons will adapt to the spiking patterns and store the events in the backgr
Externí odkaz:
https://doaj.org/article/959016de0e2648f38e4947507258c303
Autor:
Yaotian Ling, Zongwei Wang, Zhizhen Yu, Shengyu Bao, Yuhang Yang, Lin Bao, Yining Sun, Yimao Cai, Ru Huang
Publikováno v:
IEEE Transactions on Electron Devices. :1-7
Publikováno v:
IEEE Transactions on Electron Devices. 69:3100-3104
Autor:
Lindong Wu, Zongwei Wang, Lin Bao, Zhizhen Yu, Qingyu Chen, Yaotian Ling, Yabo Qin, Shengyu Bao, Zhuoya Chen, Guandong Bai, Yimao Cai, John Robertson, Ru Huang
Publikováno v:
IEEE Transactions on Electron Devices. 69:1830-1834
Autor:
Lin Bao, Zongwei Wang, Yuhao Shi, Yaotian Ling, Yunfan Yang, Linbo Shan, Shengyu Bao Sin, Cuimei Wang, Qilin Zheng, Junghwan Kim, Hideo Hosono, Yimao Cai, Ru Huang
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Publikováno v:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Autor:
Yaotian Ling, Ru Huang, Shan Zheng, Guandong Bai, Yimao Cai, Zongwei Wang, Lin Bao, Shengyu Bao, Jian Kang, Guofang Zhong, Zhizhen Yu, Qilin Zheng, John Robertson
Publikováno v:
IEEE Transactions on Electron Devices. 67:4166-4171
In a digital–analog mixed neuromorphic system, various complex peripheral circuits may offset the integration and energy efficiency advantages of the dense crossbar. To simplify the peripheral circuits, a self-activation neural network (SANN) is pr
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
This paper presents a comprehensive investigation of exploiting passive RRAM crossbar array with nonlinear selective elements for neuromorphic computing. Design considerations, including weight-mapping method, voltage-applying strategy, and optimizat
Autor:
Yishao Chen, Shengyu Bao, Linbo Shan, Ru Huang, Yimao Cai, Lindong Wu, Zongwei Wang, Kechao Tang
Publikováno v:
2021 China Semiconductor Technology International Conference (CSTIC).
Resistive switching devices with inherent nonlinear characteristics have great advantages in high density integration. In this paper, we demonstrated non-linear resistive switching behavior through engineering the interfacial layer with the low-dimen
Recently, an in-memory analog circuit based on crosspoint memristor arrays was reported, which enables solving linear regression problems in one step and can be used to train many other machine learning algorithms. To explore its potential for comput
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e093384db8518590edf44da40be58b4c
http://hdl.handle.net/11311/1191236
http://hdl.handle.net/11311/1191236